Convergent beam electron diffraction

1987 ◽  
Vol 51 (359) ◽  
pp. 33-48 ◽  
Author(s):  
P. E. Champness

AbstractIn convergent-beam electron diffraction (CBED) a highly convergent electron beam is focussed on to a small (⩽50 nm) area of the sample. Instead of the diffraction spots that are obtained in the back focal plane of the objective lens with parallel illumination in conventional selected-area electron diffraction, CBED produces discs of intensity. The point group can be determined uniquely from the symmetry within the individual discs and the overall pattern. In order to determine the point group, it is usually necessary to record a number of CBED patterns with the electron beam aligned along different zone axes, but sometimes only one, high-symmetry pattern is required. The positions of reflections in higher-order Laue zones can be used to identify the crystal system and lattice type and to detect the presence of certain glide planes. The repeat along the zone axis that is parallel to the beam can be calculated from the diameters of the Laue zones. Hence the presence ofpolymorphs can be detected. Doubly-diffracted discs in CBED often contain a ‘line of dynamic absence’, the orientation of this line with respect to the symmetry seen in the bright field disc allows the symmetry element responsible for it (glide plane or screw diad) to be identified. This allows 191 of the 230 space groups to be uniquely identified. The measurement of specimen thickness, extinction distance and cell parameters are also briefly discussed.

2014 ◽  
Vol 169 (10) ◽  
pp. 838-844 ◽  
Author(s):  
Samuel Tehuacanero-Cuapa ◽  
José Reyes-Gasga ◽  
Etienne F. Brès ◽  
Rodolfo Palomino-Merino ◽  
Ramiro García-García

Author(s):  
William Krakow

Considerable effort has been expended to use convergent beam electron diffraction (CBED) from small specimen areas with an incoherent thermionic source. Here space group classification and even three dimensional analysis have proven to be possible by observing the diffraction disks and the fine detail seen within these disks. The use of a coherent convergent beam has been attempted for a field emission STEM type instrument and a number of novel interference effects have recently been observed in both crystalline and amorphous materials. Preliminary CBED computer calculations were performed for a dislocation in Si3 however no structural detail was observed in the diffraction disks because the computation only considered a 30Å thick crystal. Computations covering a wide range of materials, specimen thickness values and STEM type probe conditions has been obtained by the present author. In these papers only results for zone axis patterns and 100kV electrons were given. It is now the intent to present some new results at high voltages (200kV) and for non-symmetric crystal orientations and with larger reciprocal space sampling distributions


Author(s):  
Max T. Otten

Convergent Beam Electron Diffraction (CBED) thickness measurement is the easiest and most accurate way of determining the thickness of crystalline materials. The method was described by Kelly et al. The specimen thickness can be calculated from a few measurements on a recorded diffraction pattern in a matter of minutes (by hand) or seconds (by a computer program).For thickness measurement a CBED pattern is needed that contains a two-beam diffracting condition, with a dark Kikuchi line going through the centre of the Bright-Field disc and the corresponding bright Kikuchi line through the centre of a Dark-Field disc. Parallel to the bright Kikuchi line, the Dark-Field disc contains a number of fringes (Fig. 1) whose distance from the Kikuchi line varies with specimen thickness. The data needed for a measurement are the electron wavelength, the d-spacing dhkl of the diffraction used, the distance 2θB between the Bright-Field disc and Dark-Field disc in the CBED pattern, and the distances Δθi between the dark thickness fringes and the bright Kikuchi line in the Dark-Field disc (Fig. 2).


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