scholarly journals Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction

2019 ◽  
Vol 3 (8) ◽  
Author(s):  
Honggyu Kim ◽  
Manik Goyal ◽  
Salva Salmani-Rezaie ◽  
Timo Schumann ◽  
Tyler N. Pardue ◽  
...  
1994 ◽  
Vol 9 (2) ◽  
pp. 426-430 ◽  
Author(s):  
V.P. Dravid ◽  
H. Zhang ◽  
L.A. Wills ◽  
B.W. Wessels

Thin films of BaTiO3 deposited on (100)LaAlO3 substrate by metal-organic chemical vapor deposition (MOCVD) are investigated using several electron-optical techniques. Combined high resolution transmission electron microscopy (HRTEM), electron energy loss spectrometry (EELS), and convergent beam electron diffraction (CBED) indicate a substantial influence of lattice strain on the structural and optical characteristics of BaTiO3 films. Spatially resolved EELS and CBED studies indicate that the substrate influence persists up to about 40 nm away from the interface. The changes in the dielectric function of the films, as inferred from spatially resolved EELS, appear to correlate well with internal lattice strain in the films as deduced from convergent beam electron diffraction (CBED).


1996 ◽  
Vol 449 ◽  
Author(s):  
F. A. Ponce ◽  
W. T. Young ◽  
D. Cherns ◽  
J. W. Steeds ◽  
S. Nakamura

ABSTRACTIn this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the <0001> direction. and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors <0001>. The other type of observed defects consist of inversion domains with [0001 ] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.


1987 ◽  
Vol 51 (359) ◽  
pp. 33-48 ◽  
Author(s):  
P. E. Champness

AbstractIn convergent-beam electron diffraction (CBED) a highly convergent electron beam is focussed on to a small (⩽50 nm) area of the sample. Instead of the diffraction spots that are obtained in the back focal plane of the objective lens with parallel illumination in conventional selected-area electron diffraction, CBED produces discs of intensity. The point group can be determined uniquely from the symmetry within the individual discs and the overall pattern. In order to determine the point group, it is usually necessary to record a number of CBED patterns with the electron beam aligned along different zone axes, but sometimes only one, high-symmetry pattern is required. The positions of reflections in higher-order Laue zones can be used to identify the crystal system and lattice type and to detect the presence of certain glide planes. The repeat along the zone axis that is parallel to the beam can be calculated from the diameters of the Laue zones. Hence the presence ofpolymorphs can be detected. Doubly-diffracted discs in CBED often contain a ‘line of dynamic absence’, the orientation of this line with respect to the symmetry seen in the bright field disc allows the symmetry element responsible for it (glide plane or screw diad) to be identified. This allows 191 of the 230 space groups to be uniquely identified. The measurement of specimen thickness, extinction distance and cell parameters are also briefly discussed.


Author(s):  
K. Ishizuka

The technique of convergent-beam electron diffraction (CBED) has been established. However there is a distinct discrepancy concerning the CBED pattern symmetries associated with translation symmetries parallel to the incident beam direction: Buxton et al. assumed no detectable effects of translation components, while Goodman predicted no associated symmetries. In this report a procedure used by Gjønnes & Moodie1 to obtain dynamical extinction rules will be extended in order to derive the CBED pattern symmetries as well as the dynamical extinction rules.


Author(s):  
John F. Mansfield

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.


Author(s):  
J W Steeds

That the techniques of convergent beam electron diffraction (CBED) are now widely practised is evident, both from the way in which they feature in the sale of new transmission electron microscopes (TEMs) and from the frequency with which the results appear in the literature: new phases of high temperature superconductors is a case in point. The arrival of a new generation of TEMs operating with coherent sources at 200-300kV opens up a number of new possibilities.First, there is the possibility of quantitative work of very high accuracy. The small probe will essentially eliminate thickness or orientation averaging and this, together with efficient energy filtering by a doubly-dispersive electron energy loss spectrometer, will yield results of unsurpassed quality. The Bloch wave formulation of electron diffraction has proved itself an effective and efficient method of interpreting the data. The treatment of absorption in these calculations has recently been improved with the result that <100> HOLZ polarity determinations can now be performed on III-V and II-VI semiconductors.


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