Pulsed laser atom probe analysis of semiconductor materials

2020 ◽  
pp. 665-674
Author(s):  
C R M Grovenor ◽  
A Cerezo ◽  
J A Liddle ◽  
G D W Smith
Keyword(s):  
Pulsed Laser ◽  
Atom Probe ◽  
Semiconductor Materials ◽  
Probe Analysis ◽  
Atom Probe Analysis

Pulsed laser atom probe analysis of semiconductor materials

1986 ◽  
Vol 141 (2) ◽  
pp. 155-170 ◽  
Author(s):  
A. Cerezo ◽  
C. R. M. Grovenor ◽  
G. D. W. Smith
Keyword(s):  
Pulsed Laser ◽  
Atom Probe ◽  
Semiconductor Materials ◽  
Probe Analysis ◽  
Atom Probe Analysis

PULSED LASER ATOM PROBE ANALYSIS OF TERNARY AND QUATERNARY III-V EPITAXIAL LAYERS

1988 ◽  
Vol 49 (C6) ◽  
pp. C6-509-C6-514 ◽  
Author(s):  
J. A. LIDDLE ◽  
A. NORMAN ◽  
A. CEREZO ◽  
C. R.M. GROVENOR
Keyword(s):  
Pulsed Laser ◽  
Atom Probe ◽  
Epitaxial Layers ◽  
Probe Analysis ◽  
Atom Probe Analysis

PULSED LASER ATOM PROBE ANALYSIS OF III-V COMPOUND SEMICONDUCTORS

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-309-C2-314 ◽  
Author(s):  
A. CEREZO ◽  
C. R.M. GROVENOR ◽  
G. D.W. SMITH
Keyword(s):  
Pulsed Laser ◽  
Compound Semiconductors ◽  
Atom Probe ◽  
Probe Analysis ◽  
Atom Probe Analysis

Atom Probe Analysis of Native Oxides and the Thermal Oxide/Silicon Interface.

1984 ◽  
Vol 37 ◽  
Author(s):  
C. R. M. Grovenora ◽  
A. Cerezo ◽  
G. D. W. Smith
Keyword(s):  
Pulsed Laser ◽  
Atom Probe ◽  
Native Oxide ◽  
Native Oxides ◽  
Probe Analysis ◽  
Thermal Oxide ◽  
Silicon Interface ◽  
First Time ◽  
Atom Probe Analysis

AbstractThe Pulsed Laser Atom Probe has been used to determine for the first time the stoichiometry of both the native oxide on Si and of the SiO2/Si interface.

Pulsed laser atom probe analysis of GaAs and InAs

1985 ◽  
Vol 46 (6) ◽  
pp. 567-569 ◽  
Author(s):  
A. Cerezo ◽  
C. R. M. Grovenor ◽  
G. D. W. Smith
Keyword(s):  
Pulsed Laser ◽  
Atom Probe ◽  
Probe Analysis ◽  
Atom Probe Analysis

Pulsed Lasek Atom Probe Analysis of Stoichiometry Variations in GaAlAs

1985 ◽  
Vol 54 ◽  
Author(s):  
C.R.M. Grovenor ◽  
A. Cerezo ◽  
G.D.W. Smith
Keyword(s):  
Pulsed Laser ◽  
Atom Probe ◽  
Concentration Fluctuations ◽  
Routine Analysis ◽  
Semiconducting Materials ◽  
Accurate Analysis ◽  
Aluminium Concentration ◽  
Probe Analysis ◽  
Wide Range ◽  
Atom Probe Analysis

ABSTRACTThe recent development of Pulsed Laser Atom Probe (PLAP) analysis has allowed routine analysis of the composition of a wide range of semiconducting materials. This paper presents results on the analysis of stoi chiometry variations in MOCVü GaAlAs layers demonstrating that accurate analysis of aluminium concentration fluctuations can be achieved with this technique.

ATOM-PROBE ANALYSIS OF G.P. ZONES IN AN Al-1.7 at % Cu ALLOY

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-349-C6-354
Author(s):  
K. Hono ◽  
T. Sakurai ◽  
H. W. Pickering
Keyword(s):  
Atom Probe ◽  
Cu Alloy ◽  
Probe Analysis ◽  
Atom Probe Analysis

ON ATOM-PROBE ANALYSIS OF CUBIC MX-TYPE CARBIDES AND CARBONITRIDES

1988 ◽  
Vol 49 (C6) ◽  
pp. C6-299-C6-304 ◽  
Author(s):  
U. ROLANDER ◽  
H.-O. ANDRÉN
Keyword(s):  
Atom Probe ◽  
Probe Analysis ◽  
Atom Probe Analysis
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