Pulsed Lasek Atom Probe Analysis of Stoichiometry Variations in GaAlAs
Keyword(s):
ABSTRACTThe recent development of Pulsed Laser Atom Probe (PLAP) analysis has allowed routine analysis of the composition of a wide range of semiconducting materials. This paper presents results on the analysis of stoi chiometry variations in MOCVü GaAlAs layers demonstrating that accurate analysis of aluminium concentration fluctuations can be achieved with this technique.
1988 ◽
Vol 49
(C6)
◽
pp. C6-509-C6-514
◽
1986 ◽
Vol 141
(2)
◽
pp. 155-170
◽
Keyword(s):
1986 ◽
Vol 47
(C2)
◽
pp. C2-309-C2-314
◽
Keyword(s):
Keyword(s):
1986 ◽
Vol 47
(C2)
◽
pp. C2-415-C2-424
◽
Keyword(s):
1984 ◽
Vol 45
(C9)
◽
pp. C9-477-C9-481
1987 ◽
Vol 48
(C6)
◽
pp. C6-349-C6-354
1988 ◽
Vol 49
(C6)
◽
pp. C6-299-C6-304
◽