Carrier confinement to one and zero degrees of freedom: the optical and structural properties of quantum wires and quantum boxes in gallium arsenide

2020 ◽  
pp. 187-193
Author(s):  
P M Petroff
Keyword(s):  
Gallium Arsenide ◽  
Structural Properties ◽  
Degrees Of Freedom ◽  
Quantum Wires ◽  
Carrier Confinement

Cathodoluminescence investigation of lateral carrier confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates

1992 ◽  
Vol 267 (1-3) ◽  
pp. 257-262 ◽  
Author(s):  
J. Christen ◽  
E. Kapon ◽  
E. Colas ◽  
D.M. Hwang ◽  
L.M. Schiavone ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Carrier Confinement

Strong charge carrier confinement in purely strain induced GaAs∕InAlAs single quantum wires

2004 ◽  
Vol 85 (17) ◽  
pp. 3672-3674 ◽  
Author(s):  
R. Schuster ◽  
H. Hajak ◽  
M. Reinwald ◽  
W. Wegscheider ◽  
D. Schuh ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wires ◽  
Single Quantum ◽  
Carrier Confinement

scholarly journals CURVATURE-INDUCED RASHBA SPIN–ORBIT INTERACTION IN STRAIN-DRIVEN NANOSTRUCTURES

SPIN ◽  
2013 ◽  
Vol 03 (03) ◽  
pp. 1340002 ◽  
Author(s):  
PAOLA GENTILE ◽  
MARIO CUOCO ◽  
CARMINE ORTIX
Keyword(s):  
Schrödinger Equation ◽  
Schrodinger Equation ◽  
Degrees Of Freedom ◽  
Quantum Wires ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
One Dimensional ◽  
Rashba Spin ◽  
Low Dimensional

We derive the effective dimensionally reduced Schrödinger equation with spin–orbit interaction (SOI) in low-dimensional electronic strain-driven nanostructures. By employing a method of adiabatic separation among fast normal quantum degrees of freedom and slow tangential quantum degrees of freedom, we show the emergence of a strain-induced Rashba-like SOI. By applying this analysis to one-dimensional (1D) curved quantum wires we demonstrate that the curvature-induced Rashba SOI leads to enhanced spin–orbit effects.

scholarly journals Structures And Bandgaps Of Small Range Gallium Arsenide Nanocluster

2014 ◽  
Vol 4 (2) ◽  
Author(s):  
Nor Muniroh Musa ◽  
Ahmad Radzi Mat Isa ◽  
Mohd Khalid Kasmin
Keyword(s):  
Gallium Arsenide ◽  
Quantum Dot ◽  
Structural Properties ◽  
First Principles ◽  
Cluster Size ◽  
First Principles Calculation ◽  
Small Range ◽  
Bulk Gaas ◽  
Energy Bandgap

There is currently a lot of excitement about Gallium Arsenide nanoclusters due in part to the prediction that smallenough GaxAsy clusters will act as “quantum dot” whose bandgaps can be tuned by varying the cluster size. Small range GaAs clusters ( x + y /10) were studied by using first principles calculation where structural properties and bandgap were investigated. We obtained the results of bandgap which are larger than the simulated bandgap of bulk GaAs. In this paper, we discuss the effect of GaAs cluster size to the energy bandgap.

The electronic and structural properties of the silicon-gallium arsenide(110) interface

1998 ◽  
Vol 123-124 ◽  
pp. 533-537 ◽  
Author(s):  
P.R. Dunstan ◽  
S.P. Wilks ◽  
S.R. Burgess ◽  
M. Pan ◽  
R.H. Williams ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Structural Properties ◽  
Electronic And Structural Properties

Formation of a system of InGaAs quantum wires in a gallium arsenide matrix

2004 ◽  
Vol 46 (5) ◽  
pp. 942-947 ◽  
Author(s):  
L. K. Orlov ◽  
N. L. Ivina
Keyword(s):  
Gallium Arsenide ◽  
Quantum Wires

scholarly journals Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

1993 ◽  
Vol 03 (C5) ◽  
pp. 335-338 ◽  
Author(s):  
R. W. MAC LEOD ◽  
C. M. SOTOMAYOR TORRES ◽  
Y. S. TANG ◽  
A. KOHL
Keyword(s):  
Quantum Wires ◽  
Carrier Confinement

scholarly journals Elastic, Optical, Transport, and Structural Properties of GaAs

2020 ◽  
Author(s):  
Thamer A. Tabbakh ◽  
Raghad M. Aljohany ◽  
Hatem Alhazmi ◽  
Rawan M. Alsulami
Keyword(s):  
Gallium Arsenide ◽  
Physical Properties ◽  
Structural Properties ◽  
Chemical Properties ◽  
Optical Transport

One of the major objectives of physics is to understand the physical properties of compound metals. Based on this very objective, in this chapter, we intend to review the physical as well as chemical properties of Gallium Arsenide material.

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