Enhanced-Fluidity Liquid Mixtures: Fundamental Properties and Chromatography

2007 ◽  
pp. 431-458
2021 ◽  
Vol 7 (7) ◽  
pp. eabe7275
Author(s):  
Bilin Zhuang ◽  
Gabriele Ramanauskaite ◽  
Zhao Yuan Koa ◽  
Zhen-Gang Wang

Liquid mixtures are ubiquitous. Miscibility and dielectric constant are fundamental properties that govern the applications of liquid mixtures. However, despite their importance, miscibility is usually predicted qualitatively based on the vaguely defined polarity of the liquids, and the dielectric constant of the mixture is modeled by introducing mixing rules. Here, we develop a first-principles theory for polar liquid mixtures using a statistical field approach, without resorting to mixing rules. With this theory, we obtain simple expressions for the mixture’s dielectric constant and free energy of mixing. The dielectric constant predicted by this theory agrees well with measured data for simple binary mixtures. On the basis of the derived free energy of mixing, we can construct a miscibility map in the parameter space of the dielectric constant and molar volume for each liquid. The predicted miscibility shows remarkable agreement with known data, thus providing a quantitative basis for the empirical “like-dissolves-like” rule.


1980 ◽  
Vol 41 (C7) ◽  
pp. C7-133-C7-136 ◽  
Author(s):  
J. del Cueto ◽  
R. L. Johnson ◽  
T. Rohde ◽  
F. H. Wirth ◽  
E. H. Graf

Author(s):  
V.N. Petrov ◽  
◽  
V.F. Sopin ◽  
L.A. Akhmetzyanova ◽  
Ya.S. Petrova ◽  
...  

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.


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