Patterning of Ionic Insulator Surfaces with Low-Energy Ion Beams

2012 ◽  
pp. 109-134 ◽  
Author(s):  
Franciszek Krok ◽  
Salah Saeed ◽  
Marek Kolmer ◽  
Marek Szymonski
Keyword(s):  
1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).


1969 ◽  
Vol 72 (2) ◽  
pp. 217-219 ◽  
Author(s):  
R.B. Brown ◽  
P.D. Bourland ◽  
D. Powers

2012 ◽  
Vol 83 (2) ◽  
pp. 02B320 ◽  
Author(s):  
N. Chauvin ◽  
O. Delferrière ◽  
R. Duperrier ◽  
R. Gobin ◽  
P. A. P. Nghiem ◽  
...  

1967 ◽  
Vol 45 (12) ◽  
pp. 4039-4051 ◽  
Author(s):  
L. Hastings ◽  
A. van Wijngaarden

Local regions on the surface of ZnO:Zn phosphor samples were deteriorated by a large number of low-energy ions. In this manner thin films which did not luminesce under ion bombardment were prepared. The phosphor samples were then scanned across energetic ion beams with sufficient energy to traverse the thin phosphor films. By comparing the luminescent response to this ion excitation in the damaged and undamaged portions of the phosphor surface, the total average energy losses of 1H, 4He, 14N, 40Ar, and 84Kr in passing through the films were determined. It was found that the energy losses for the heavier projectiles, when compared with the energy loss of hydrogen, are appreciably smaller than the energy losses predicted by the Lindhard and Scharff theory.The deterioration depth of the phosphor under prolonged bombardment is proportional to the speed of the damaging projectiles.


2003 ◽  
Vol 203-204 ◽  
pp. 354-358 ◽  
Author(s):  
P. Konarski ◽  
A. Mierzejewska
Keyword(s):  

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