Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etching

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

Low energy ion beam etching of CuInSe2 surfaces

1999 ◽  
Vol 17 (1) ◽  
pp. 19-25 ◽  
Author(s):  
K. Otte ◽  
G. Lippold ◽  
F. Frost ◽  
A. Schindler ◽  
F. Bigl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

The Promotion of Silicide Formation using a Scanned Silicon Ion Beam

1988 ◽  
Vol 100 ◽  
Author(s):  
E. J. Williams ◽  
E. G. Bithell ◽  
C. B. Boothroyd ◽  
W. M. Stobbs ◽  
R. J. Young ◽  
...  
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Silicide Formation ◽  
Argon Ion

ABSTRACTThe promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

Using a quartz crystal microbalance for low energy ion beam etching studies

2000 ◽  
Vol 18 (1) ◽  
pp. 232-236 ◽  
Author(s):  
M. F. Doemling ◽  
B. Lin ◽  
N. R. Rueger ◽  
G. S. Oehrlein ◽  
R. A. Haring ◽  
...  
Keyword(s):  
Quartz Crystal Microbalance ◽  
Quartz Crystal ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching
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