Chemical Vapor Growth of Titanium Diboride Whisker

This work demonstrates an elegant way to synthesize α-RuCl3 nanosheets down to the monolayer limit by chemical vapor transport and subsequent delamination techniques.

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Thermodynamic and Raman spectrometry studies showing the role of the silica tube in the chemical vapor transport of titanium diboride

Zeitschrift für anorganische und allgemeine Chemie ◽

10.1002/zaac.19875450225 ◽

1987 ◽

Vol 545 (2) ◽

pp. 209-218 ◽

Cited By ~ 3

Author(s):

Y. Monteil ◽

R. Feurer ◽

G. Constant

Keyword(s):

Titanium Diboride ◽

Chemical Vapor ◽

Vapor Transport ◽

Chemical Vapor Transport ◽

Silica Tube ◽

Raman Spectrometry

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Chemical Vapor Growth of ZnTe by Open Tube Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.20.2251 ◽

1981 ◽

Vol 20 (11) ◽

pp. 2251-2252 ◽

Cited By ~ 7

Author(s):

Hiroshi Ogawa ◽

Mitsuhiro Nishio

Keyword(s):

Chemical Vapor ◽

Open Tube ◽

Vapor Growth

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Chemical vapor deposition of titanium diboride

Journal of Crystal Growth ◽

10.1016/0022-0248(74)90247-4 ◽

1974 ◽

Vol 26 (2) ◽

pp. 203-209 ◽

Cited By ~ 40

Author(s):

Takehiko Takahashi ◽

Hideo Kamiya

Keyword(s):

Chemical Vapor Deposition ◽

Titanium Diboride ◽

Vapor Deposition ◽

Chemical Vapor

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Growth and characterization of epitaxial films of ZnGeP2.

MRS Proceedings ◽

10.1557/proc-744-m8.46 ◽

2002 ◽

Vol 744 ◽

Cited By ~ 1

Author(s):

G.A. Verozubova ◽

A. I. Gribenyukov ◽

M.C. Ohmer ◽

N.C. Fernelius ◽

J.T. Goldstein

Keyword(s):

Vacancy Concentration ◽

Chemical Vapor ◽

Epitaxial Films ◽

Vapor Transport ◽

Chemical Vapor Transport ◽

Photoluminescence Properties ◽

Vapor Growth ◽

Homoepitaxial Layers ◽

Crystal Lattice Parameters

ABSTRACTThermodynamic analysis of the vapor phase over ZnGeP2 in Zn-Ge-P-Cl system has been carried out. The analysis showed that this system can be used for the vapor growth of ZnGeP2. Homoepitaxial layers of ZnGeP2 were grown in a closed system using chemical vapor transport. Electrical and photoluminescence properties of the layers were studied, and crystal lattice parameters were measured. Comparison of properties for bulk and vapor grown ZnGeP2 crystals were carried out. It was found that the vapor grown crystals have more perfect structure than the bulk ones, particularly, they have significantly lower vacancy concentration.

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Preparation of TiB2/C Composites in a CVI Reactor

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.334-335.329 ◽

2007 ◽

Vol 334-335 ◽

pp. 329-332 ◽

Cited By ~ 2

Author(s):

Min Ki Kim ◽

Dong Phil Kim ◽

Gui Yung Chung

Keyword(s):

Reaction Time ◽

Titanium Diboride ◽

Arrhenius Plot ◽

Chemical Vapor ◽

Chemical Vapor Infiltration ◽

Fiber Reinforced Composites ◽

Temperature Reaction ◽

Reinforced Composites ◽

Attractive Candidate ◽

Infiltration Parameters

Titanium diboride (TiB2) appears to be an attractive candidate for a high-temperature fiber reinforced composites. Chemical Vapor Infiltration (CVI) has been carried out for the preparation of TiB2/C composites. Titanium diboride has been deposited from the gas mixtures of TiCl4, BCl3, and H2 in the furnace at the reaction temperatures between 850 to 950 °C and about 20 torr. Effects of infiltration parameters such as temperature, reaction time, and concentrations of BCl3 and H2 have been studied. Analyses with SEM, TGA and XPS were carried out. The amount of deposition in the preform increased with the increases of the reaction time, temperature and the flow rate of BCl3. The activation energy of the whole deposition reaction could be estimated from the Arrhenius plot.

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