Semi-Analytic Functions to Calculate the Deposition Coefficients for Ice Crystal Vapor Growth in Bin and Bulk Microphysical Models.

Numerical cloud models require estimates of the vapor growth rate for ice crystals. Current bulk and bin microphysical parameterizations generally assume that vapor growth is diffusion limited, though some parameterizations include the influence of surface attachment kinetics through a constant deposition coefficient. A parameterization for variable deposition coefficients is provided herein. The parameterization is an explicit function of the ambient ice supersaturation and temperature, and an implicit function of crystal dimensions and pressure. The parameterization is valid for variable surface types including growth by dislocations and growth by step nucleation. Deposition coefficients are predicted for the two primary growth directions of crystals, allowing for the evolution of the primary habits. Comparisons with benchmark calculations of instantaneous mass growth indicate that the parameterization is accurate to within a relative error of 1%. Parcel model simulations using Lagrangian microphysics as a benchmark indicate that the bulk parameterization captures the evolution of mass mixing ratio and fall speed with typical relative errors of less than 10%, whereas the average axis lengths can have errors of up to 20%. The bin model produces greater accuracy with relative errors often less that 10%. The deposition coefficient parameterization can be used in any bulk and bin scheme, with low error, if an equivalent volume spherical radius is provided.

Controllable Vapor Growth of CsPbBr3/CdS 1D Heterostructures with Type-II Band Alignment for High-Performance Self-Powered Photodetector

The controllable growth of semiconductor heterostructures with suitable band alignment and morphology is crucial to construct high-performance optoelectronic devices, which is limited to the traditional semiconductor families. Here, high-quality CsPbBr3/CdS...

Estimating Surface Attachment Kinetic and Growth Transition Influences on Vapor-Grown Ice Crystals

There are few measurements of the vapor growth of small ice crystals at temperatures below −30°C. Presented here are mass-growth measurements of heterogeneously and homogeneously frozen ice particles grown within an electrodynamic levitation diffusion chamber at temperatures between −44° and −30°C and supersaturations si between 3% and 29%. These growth data are analyzed with two methods devised to estimate the deposition coefficient α without the direct use of si. Measurements of si are typically uncertain, which has called past estimates of α into question. We find that the deposition coefficient ranges from 0.002 to unity and is scattered with temperature, as shown in prior measurements. The data collectively also show a relationship between α and si, with α rising (falling) with increasing si for homogeneously (heterogeneously) frozen ice. Analysis of the normalized mass growth rates reveals that heterogeneously frozen crystals grow near the maximum rate at low si, but show increasingly inhibited (low α) growth at high si. Additionally, 7 of the 17 homogeneously frozen crystals cannot be modeled with faceted growth theory or constant α. These cases require the growth mode to transition from efficient to inefficient in time, leading to a large decline in α. Such transitions may be, in part, responsible for the inconsistency in prior measurements of α.

Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition

The MoS2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS2 film on SiC substrate shows high quality and thermal stability, in which the full width at half-maximum and first-order temperature coefficient for the $E_{2g}^1$ Raman mode are 4.6 cm−1 and −0.01382 cm−1/K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, including an extremely low dark current of ~1 nA at a bias of 20 V and a low noise equivalent of 10−13–10−15 W/Hz1/2. The maximum responsivity of the MoS2/SiC photodetector is 5.7 A/W with the incident light power of 4.35 μW at 365 nm (UV light). Furthermore, the maximum photoconductive gain, noise equivalent power, and normalized detectivity for the fabricated detector under 365 nm illumination are 79.8, 7.08 × 10−15 W/Hz1/2, and 3.07 × 1010 Jonesat, respectively. We thus demonstrate the possibility for integrating high-performance photodetectors array based on MoS2/SiC via direct chemical vapor growth.

High-performance monolayer MoS2 photodetector enabled by oxide stress liner using scalable chemical vapor growth method

MoS2, as a typical representative of two-dimensional semiconductors, has been explored extensively in applications of optoelectronic devices because of its adjustable bandgap. However, to date, the performance of the fabricated photodetectors has been very sensitive to the surrounding environment owing to the large surface-to-volume ratio. In this work, we report on large-scale, high-performance monolayer MoS2 photodetectors covered with a 3-nm Al2O3 layer grown by atomic layer deposition. In comparison with the device without the Al2O3 stress liner, both the photocurrent and responsivity are improved by over 10 times under 460-nm light illumination, which is due to the tensile strain induced by the Al2O3 layer. Further characterization demonstrated state-of-the-art performance of the device with a responsivity of 16.103 A W−1, gain of 191.80, NEP of 7.96 × 10−15 W Hz−1/2, and detectivity of 2.73 × 1010 Jones. Meanwhile, the response rise time of the photodetector also reduced greatly because of the increased electron mobility and reduced surface defects due to the Al2O3 stress liner. Our results demonstrate the potential application of large-scale strained monolayer MoS2 photodetectors in next-generation imaging systems.