scholarly journals Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

1995 ◽  
Vol 87 (1) ◽  
pp. 35-46
Author(s):  
W. Walukiewicz
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Two Dimensional

scholarly journals Efficient Interlayer Exciton Transport in Two-Dimensional Metal-Halide Perovskites.

2020 ◽  
Author(s):  
Alvaro J Magdaleno ◽  
Michael Seitz ◽  
Michel Frising ◽  
Ana Herranz de la Cruz ◽  
Antonio I. Fernández-Domínguez ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Energy Transport ◽  
Diffusion Length ◽  
Charge Carrier Transport ◽  
Two Dimensional ◽  
Exciton Transport ◽  
Halide Perovskites ◽  
Excitonic Energy

We present transient microscopy measurements of interlayer energy transport in (PEA)<sub>2</sub>PbI<sub>4</sub> perovskite. We find efficient interlayer exciton transport (0.06 cm<sup>2</sup>/s), which translates into a diffusion length that exceeds 100 nm and a sub-ps timescale for energy transfer. While still slower than in-plane exciton transport (0.2 cm<sup>2</sup>/s), our results show that excitonic energy transport is considerably less anisotropic than charge-carrier transport for 2D perovskites.

scholarly journals Efficient Interlayer Exciton Transport in Two-Dimensional Metal-Halide Perovskites.

2020 ◽  
Author(s):  
Alvaro J Magdaleno ◽  
Michael Seitz ◽  
Michel Frising ◽  
Ana Herranz de la Cruz ◽  
Antonio I. Fernández-Domínguez ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Energy Transport ◽  
Diffusion Length ◽  
Charge Carrier Transport ◽  
Two Dimensional ◽  
Exciton Transport ◽  
Halide Perovskites ◽  
Excitonic Energy

We present transient microscopy measurements of interlayer energy transport in (PEA)<sub>2</sub>PbI<sub>4</sub> perovskite. We find efficient interlayer exciton transport (0.06 cm<sup>2</sup>/s), which translates into a diffusion length that exceeds 100 nm and a sub-ps timescale for energy transfer. While still slower than in-plane exciton transport (0.2 cm<sup>2</sup>/s), our results show that excitonic energy transport is considerably less anisotropic than charge-carrier transport for 2D perovskites.

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

scholarly journals Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Transport

Charge Carrier Transport in Phenazine

1979 ◽  
Vol 53 (3-4) ◽  
pp. 271-280 ◽  
Author(s):  
S. C. Mathur ◽  
B. Kumar ◽  
Keya Roy
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

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