RESULTS OF RESEARCH OF RECTIFIER DIODES ON RESISTANCE

The article describes the study of rectifier diodes for resistance to special factors. The direct reverse current Iobr and the forward voltage of the diode Uobr were considered as a criterion for the performance of diodes. Based on the results of the calculation and experimental evaluation of the resistance of rectifier diodes to special factors, graphical dependences of the reverse current and direct voltage on the value of the special factor are constructed.

Download Full-text

Rectifying Structures Resulting from Gold, Cadmium and Thallium Deposited on Selenium

MRS Proceedings ◽

10.1557/proc-25-625 ◽

1983 ◽

Vol 25 ◽

Author(s):

C.H. Champness ◽

V. Nerguizian ◽

C. Nerguizian ◽

A. Chan

Keyword(s):

Work Function ◽

Reverse Current ◽

Interface State ◽

State Density ◽

Reverse Voltage ◽

Forward Voltage ◽

Substrate Heating ◽

Barrier Heights ◽

Aluminum Base ◽

Base Contact

ABSTRACTStructures of the form Al-Bi-Se-metal were fabricated by deposition of the metals gold, cadmium, bismuth and thallium as thin films on a layer of crystallized selenium. The selenium was itself evaporated on a layer of bismuth on an aluminum base. This Al-Bi-Se base contact was rendered ohmic by substrate heating during the selenium deposition. The diodes showed forward-to-reverse current rectification ratios ranging from large for thallium to small for gold. At small forward voltage, the current density increased with increasing work function from thallium to gold, whereas the voltage intercepts Vo on plots of (capacitance)−2 versus reverse voltage decreased with increasing work function. From these Vo values and the slopes of the latter plots, barrier heights were deduced and plotted against work function. From this plot showing a decrease of barrier height with decreasing work function, it was possible to estimate an interface state density of 1013 cm−2 volt−1 assuming the existence of an interfacial layer 100Å in thickness. While the Se-Tl contact showed excellent rectification, it exhibited rapid degradation with time from atmospheric oxidation.

Download Full-text

Analysis and Simulation of Temperature and I-V Characteristics for SiC Schottky Barrier Diodes

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.875-877.690 ◽

2014 ◽

Vol 875-877 ◽

pp. 690-694

Author(s):

Bo Yuan ◽

Shi Bin Chen ◽

Xiao Jia

Keyword(s):

Schottky Barrier ◽

Bias Voltage ◽

Reverse Current ◽

Simulation Software ◽

Schottky Barrier Diode ◽

Forward Voltage ◽

Current Voltage ◽

Different Temperatures ◽

Current Voltage Characteristics

In this paper, semiconductor simulation software ISE TCAD 10.0 was used to simulate W/SiC SBD forward voltage characteristics and reverse voltage characteristics at different temperatures on the basis of theoretical analysis, and the valuable results were achieved. Under the temperature range from 73 K to 773 K, the simulation results of W/SiC Schottky barrier diode forward voltage characteristics showed that forward characteristics were significant influenced by the temperature. At room temperature (303K), if bias voltage was low, the current will be exponential growing with voltage, and the turn-on voltage of W/SiC Schottky barrier diode was about 0.2V. If bias voltage was high, the current increased will be high, and the series resistance effect will become obvious. Under lower bias (2V), a different temperature from 73K to 573K had small impact on reverse current-voltage characteristics. The results showed that the device had the good rectifier characteristics, small reverse current, high breakdown voltage, and the device can steadily and long-term work in high temperature and other complex environment.

Download Full-text

Schottky Barrier Formation and Long Term Stability of Metal/N-Lnp Interfaces

MRS Proceedings ◽

10.1557/proc-281-715 ◽

1992 ◽

Vol 281 ◽

Author(s):

Z. Q. Shi ◽

W. A. Anderson

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Leakage Current ◽

Reverse Current ◽

Testing Time ◽

Forward Voltage ◽

Term Stability ◽

Long Term Stability ◽

Reverse Leakage Current

ABSTRACTThe formation of reliable high barrier height Schottky contacts to n-InP is essential for useful device fabrication. Fermi-level pinning traditionally has restricted the application of InP due to large reverse leakage current. Recently, we have proposed the enhancement of Schottky barrier heights (up to 0.98 eV) by deposition with the substrate cooled to low temperature (LT=77K) rather than at room temperature (RT=300K). Studies of the resistance of thin metal films during deposition reveals significant differences in metal nucleation for RT and LT diodes. For the long term stability study, a reverse bias of 2.0V was applied to both RT and LT diodes for more than 1500 hours. Then a constant forward current of 20 mA/cm2 was applied to the diode. The reverse current and forward voltage were recorded as a function of the testing time. After each step the saturation current density (Jo), barrier height (øB), and ideality factor (n) were measured using the current-voltage (I-V) technique. For a LT Au/n-InP diode, the Jo, øB, and n factor were found to be 3.4 × 10−11 A/cm2, 0.98 eV, and 1.31 before testing, and 4.8 × 10−10 A/cm2, 0.92 eV, and 1.31 after testing. The reverse leakage current was nearly constant during the testing. The forward voltage showed a little drop with time. The ultra-high øB and good stability of the LT diodes will be discussed in terms of the interface modification.

Download Full-text