Measuring complex for determining the characteristics of high-voltage silicon carbide Schottky diodes in impulse modes

This paper describes a developed automated research measuring complex that allows one to determine the parameters of currents, voltages and power of silicon carbide Schottky diodes when applied reverse voltage impulses with amplitudes from 400 to 1000 V. The research measuring complex was tested on DDSH411A91 («GRUPPA KREMNY EL») and C3D1P7060Q (Cree/Wolfspeed) silicon carbide Schottky diodes and allows to determine their maximum values of the rate of rise of reverse voltage dV/dt (877 V/ns and 683 V/ns). Also, the maximum values of the current rise rate dI/dt were determined for DDSH411A91 (3.24 A/ns) and C3D1P7060Q (3.72 A/ns) diodes. For the first time it was established that, when a reverse voltage impulse with an amplitude of 1000 V is applied, the maximum values of instantaneous fullpower reach 1419 VA for the DDSH411A91 diode and 1638 VA for the C3D1P7060Q diode.

TEMPERATURE MEASUREMENT WITH PHOTODIODE IN DIFFERENT OPERATING MODES

A method for contactless temperature measurement with photodetectors in different operating modes has been developed. It is based on the periodic change of the spectral sensitivity of the photodiode depending on the applied reverse voltage. This is accomplished by switching the photodiode within one measurement from photovoltaic to photoconductive mode. For this purpose, the scheme of the respective electronic key has been developed.

High-efficiency three-way Doherty power amplifier using reconfigurable PD

In this paper, a new reconfigurable power divider (PD) is proposed to improve the efficiency of the three-way Doherty power amplifier (DPA). The conventional λ/4 transmission line is replaced by the proposed reconfigurable PD in the input of peaking amplifier, where the 90° phase shift and impedance matching can be achieved. Furthermore, the output power distribution ratio (PDR) can be continuously adjusted in a large range by adjusting the reverse voltage of the varactor diodes. Therefore, the reconfigurable PD with the best PDR can assign input power to the peaking amplifier. Experiment results show that the maximum measured power added efficiency (PAE) of the proposed three-way DPA is 49%, which is improved by 5% compared with conventional three-way DPA.

Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature

In this work we theoretically investigate the responsivity/noise equivalent power (NEP) trade-off in graphene/semiconductor Schottky photodetectors (PDs) operating in the near-infrared regime and working at room temperature. Our analysis shows that the responsivity/NEP ratio is strongly dependent on the Schottky barrier height (SBH) of the junction, and we derive a closed analytical formula for maximizing it. In addition, we theoretically discuss how the SBH is related to the reverse voltage applied to the junction in order to show how these devices could be optimized in practice for different semiconductors. We found that graphene/n-silicon (Si) Schottky PDs could be optimized at 1550 nm, showing a responsivity and NEP of 133 mA/W and 500 fW/Hz, respectively, with a low reverse bias of only 0.66 V. Moreover, we show that graphene/n-germanium (Ge) Schottky PDs optimized in terms of responsivity/NEP ratio could be employed at 2000 nm with a responsivity and NEP of 233 mA/W and 31 pW/Hz, respectively. We believe that our insights are of great importance in the field of silicon photonics for the realization of Si-based PDs to be employed in power monitoring, lab-on-chip and environment monitoring applications.

Design of an AC Driving Waveform Based on Characteristics of Electrowetting Stability for Electrowetting Displays

In traditional electrowetting display (EWD) drivers, direct current (DC) voltage and pulse width modulation are often used, which easily caused an electrowetting charge trapping phenomenon in a hydrophobic insulating layer. Therefore, the driving voltage must be increased for driving EWDs, and oil backflow cannot be solved. Aqueous solutions are often used as polar liquids for EWDs, and the reverse voltage of alternating current (AC) driving can cause chemical reactions between water and indium tin oxide (ITO). So, a driving waveform was proposed, which included a DC waveform and an AC waveform, to separately drive EWDs for oil rupture and open state. Firstly, a DC waveform was used when the oil was broken, and the response time was reduced by designing the DC voltage and duration. Secondly, an AC waveform was used when the oil required to be stable. Oil backflow could be suppressed by the AC waveform. The main parameters of AC waveform include reverse voltage, frequency and duty cycle. The reverse voltage of EWDs could be obtained by voltammetry. The frequency could be obtained by analyzing the rising and falling edges of the capacitance voltage curve. The experimental results showed that the proposed waveform can effectively suppress oil backflow and shorten the response time. The response time was about 86% lower than the conventional driving waveforms, and oil backflow was about 72% slower than the DC driving waveform.

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm2 is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ VF = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm2.