THE INFLUENCE OF CONDITIONS OF FORMATION OF HETEROSTRUCTURES BASED ON NITRIDES OF III GROUP, ON THE STRUCTURAL PERFECTION OF THE INSTRUMENT STRUCTURES FOR MICROWAVE TRANSISTORS, AND OPTOELECTRONIC DEVICES IN THE ULTRAVIOLET RANGE.
2017 ◽
Vol 2
(6)
◽
pp. 102-109
Keyword(s):
2015 ◽
Keyword(s):
1997 ◽