Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices

CrystEngComm ◽  
2016 ◽  
Vol 18 (19) ◽  
pp. 3488-3497 ◽  
Author(s):  
C. Hartmann ◽  
J. Wollweber ◽  
S. Sintonen ◽  
A. Dittmar ◽  
L. Kirste ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Structural Perfection ◽  
High Structural Perfection ◽  
Deep Uv

Favourable growth conditions for the preparation of bulk AlN single crystals by PVT

CrystEngComm ◽  
2020 ◽  
Vol 22 (10) ◽  
pp. 1762-1768 ◽  
Author(s):  
C. Hartmann ◽  
L. Matiwe ◽  
J. Wollweber ◽  
I. Gamov ◽  
K. Irmscher ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystals ◽  
Growth Conditions ◽  
Structural Perfection ◽  
High Structural Perfection ◽  
Deep Uv

A high seed temperature (2251 °C) reveals the highest deep UV transparency (α265nm = 27 cm−1), a high structural perfection (EPD = 9 × 103 cm−2) and a suitable growth rate (R = 200 μm h−1).

Pulsed modulation doping of Alx Ga1-x N (x>0.6) AlGaN epilayers for deep UV optoelectronic devices

2014 ◽  
Vol 11 (3-4) ◽  
pp. 408-411 ◽  
Author(s):  
Hung-Chi Chen ◽  
Iftikhar Ahmad ◽  
Bin Zhang ◽  
Antwon Coleman ◽  
Mahbuba Sultana ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Modulation Doping ◽  
Deep Uv

Trends in the kinetic and magnetic properties of Pb0.8Sn0.2Te single crystals of high structural perfection

1999 ◽  
Vol 41 (10) ◽  
pp. 1604-1607 ◽  
Author(s):  
M. V. Radchenko ◽  
G. V. Lashkarev ◽  
E. I. Slyn’ko ◽  
A. P. Malysheva
Keyword(s):  
Magnetic Properties ◽  
Single Crystals ◽  
Structural Perfection ◽  
High Structural Perfection

scholarly journals Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

2020 ◽  
Vol 53 (4) ◽  
pp. 880-884 ◽  
Author(s):  
Kevin-P. Gradwohl ◽  
Andreas N. Danilewsky ◽  
Melissa Roder ◽  
Martin Schmidbauer ◽  
József Janicskó-Csáthy ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Direct Evidence ◽  
X Ray Diffraction ◽  
Structural Perfection ◽  
X Ray ◽  
High Purity Germanium ◽  
High Structural Perfection ◽  
Diffraction Imaging ◽  
General Method

White-beam X-ray topography has been performed to provide direct evidence of micro-voids in dislocation-free high-purity germanium single crystals. The voids are visible because of a dynamical diffraction contrast. It is shown that voids occur only in dislocation-free parts of the crystal and do not show up in regions with homogeneous and moderate dislocation density. It is further suggested that the voids originate from clustering of vacancies during the growth process. A general method is proposed to verify the presence of voids for any crystalline material of high structural perfection.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Nano Letters ◽  
2015 ◽  
Vol 15 (6) ◽  
pp. 3743-3747 ◽  
Author(s):  
M. Wölz ◽  
C. Hauswald ◽  
T. Flissikowski ◽  
T. Gotschke ◽  
S. Fernández-Garrido ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Structural Perfection ◽  
Gan Nanowires ◽  
Tin Film ◽  
High Structural Perfection

Epitaxial Films of Faas and Fan on Fianit Substrates

1998 ◽  
Vol 512 ◽  
Author(s):  
A. N. Buzynin ◽  
V. V. Osiko ◽  
E. E. Lomonova ◽  
Yu. N. Buzynin ◽  
A. S. Usikov
Keyword(s):  
Surface Morphology ◽  
Epitaxial Films ◽  
Structural Perfection ◽  
Substrate Interface ◽  
Preliminary Annealing ◽  
Oxygen Conditions ◽  
High Structural Perfection ◽  
Film Substrate ◽  
Made In ◽  
Crystalline Growth

ABSTRACTSubrmicron heteroepitaxial GaAs and GaN films were grown by both conventional MOCVD and «capillary epitaxy» technique on (001) and (111) fianit (YSZ)substrates. A preliminary annealing of the substrates under vakuum was made in order to stabilize the surface by removing of some amount of oxygen. Conditions of single crystalline growth of GaAs submicron films (50–500nm) have been determined. The films had mirror-like surface morphology and high structural perfection. The distribution of Zr, O, Y across the film-substrate interface was sharp and doping impurities contents were uniform over the film. PL spectra of undoped GaN films on YSZ were studied.

scholarly journals Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111)

2004 ◽  
Vol 811 ◽  
Author(s):  
A. R. Kortan ◽  
M. Hong ◽  
J. Kwo ◽  
P. Chang ◽  
C. P. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Fold Axis ◽  
Uniform Thickness ◽  
Structural Perfection ◽  
Plane Orientation ◽  
Axis Parallel ◽  
High Structural Perfection ◽  
Α Al2o3

ABSTRACTWe have characterized the structure of the epitaxial Sc2O3 films grown on a α-Al2O3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc2O3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

scholarly journals Влияние висмута на структурное совершенство и люминесцентные свойства тонкопленочных упругонапряженных гетероструктур Al-=SUB=-x-=/SUB=-In-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb

2018 ◽  
Vol 60 (7) ◽  
pp. 1277 ◽  
Author(s):  
Д.Л. Алфимова ◽  
М.Л. Лунина ◽  
Л.С. Лунин ◽  
А.С. Пащенко ◽  
А.Е. Казакова
Keyword(s):  
Temperature Gradient ◽  
Luminescent Properties ◽  
Optimal Parameters ◽  
Structural Perfection ◽  
Liquid Zone ◽  
Temperature Range ◽  
High Structural Perfection ◽  
Bismuth Concentration ◽  
Zone Recrystallization

AbstractThe effect of bismuth on the structural perfection and the luminescent properties of Al_ x In_ y Ga_1– x – y Bi_ z Sb_1– z /GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.

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