scholarly journals Electron spectroscopy for chemical analysis studies on polypeptide surfaces.

1988 ◽  
Vol 45 (5) ◽  
pp. 441-447 ◽  
Author(s):  
Kohei KUGO ◽  
Tatsuro KITAURA ◽  
Jun NISHINO
Keyword(s):  
Chemical Analysis ◽  
Electron Spectroscopy

Empirical atomic sensitivity factors for quantitative analysis by electron spectroscopy for chemical analysis

1981 ◽  
Vol 3 (5) ◽  
pp. 211-225 ◽  
Author(s):  
C. D. Wagner ◽  
L. E. Davis ◽  
M. V. Zeller ◽  
J. A. Taylor ◽  
R. H. Raymond ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Chemical Analysis ◽  
Electron Spectroscopy ◽  
Sensitivity Factors

scholarly journals Analysis of fracture surface of titanium-porcelain bonding by electron spectroscopy for chemical analysis

2014 ◽  
Vol 33 (5) ◽  
pp. 689-695 ◽  
Author(s):  
Yoshiteru KANNARI ◽  
Kazuhiko ENDO ◽  
Yusuke IDA ◽  
Morio OCHI ◽  
Hiroki OHNO
Keyword(s):  
Chemical Analysis ◽  
Fracture Surface ◽  
Electron Spectroscopy

Electron spectroscopy for chemical analysis studies on oxyligated holmium compounds

1983 ◽  
Vol 87 (26) ◽  
pp. 5411-5417 ◽  
Author(s):  
W. O. Milligan ◽  
D. F. Mullica ◽  
H. O. Perkins ◽  
C. K. C. Lok ◽  
V. Young
Keyword(s):  
Chemical Analysis ◽  
Electron Spectroscopy

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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