scholarly journals Evaluation of the Fiber Stress Distribution in Aramid/Epoxy Model Composite Using Micro-Raman Spectroscopy and FEM Analysis

2007 ◽  
Vol 1 (3) ◽  
pp. 364-375
Author(s):  
Kazuto TANAKA ◽  
Kohji MINOSHIMA ◽  
Hideo YAMADA
1996 ◽  
Vol 444 ◽  
Author(s):  
C. Malhaire ◽  
Y. Guyot ◽  
M. Le Berre ◽  
B. Champagnonn ◽  
A. Sibai ◽  
...  

AbstractComposite SiO2/Si membranes are used in various type of sensors among them, resonant and pressure sensors. However due to a large thermal mismatch, residual induced stresses may affect the devices long term reliability especially for thin membranes (˜5 μm). In this study, we have characterized test structures consisting of SiO2/Si membranes with respective thickness ratio between 2 and 10. Micro-Raman Spectroscopy, well known to be an accurate, non destructive method to determine residual stresses in microelectronic devices, has shown to be a powerful testing technique to measure local stresses on micromachined structures such as membranes, with a high spatial (10 μm2 ) and stress resolution (8 MPa). At room temperature, Raman line (520 cm−1) shifts between 0.05 and 1 cm−1 are observed. Highest frequency shifts of 1cm−1 corresponds to a 230 MPa biaxial stress. Finite Element analysis (ANSYS) was used to model the thermal stress distribution over the micromachined bilayer membrane, yielding a satisfactorily agreement with the experimental results over a large membrane area. The Finite Element analysis was correlated with optical profilometer deflection measurements. Membrane deflections up to 48 μm (more than 10 times the membrane thickness) have been measured. Furthermore, Micro-Raman Spectroscopy results up to 300°C are shown and related to temperature dependent deflection measurements.


1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.


2021 ◽  
Vol 37 ◽  
pp. 102910
Author(s):  
Jhih-Huei Liu ◽  
Weiying Ke ◽  
Ming-chorng Hwang ◽  
Kuang Yu Chen

Author(s):  
D. J. Bailey ◽  
M. C. Stennett ◽  
J. Heo ◽  
N. C. Hyatt

AbstractSEM–EDX and Raman spectroscopy analysis of radioactive compounds is often restricted to dedicated instrumentation, within radiological working areas, to manage the hazard and risk of contamination. Here, we demonstrate application of WetSEM® capsules for containment of technetium powder materials, enabling routine multimodal characterisation with general user instrumentation, outside of a controlled radiological working area. The electron transparent membrane of WetSEM® capsules enables SEM imaging of submicron non-conducting technetium powders and acquisition of Tc Lα X-ray emission, using a low cost desktop SEM–EDX system, as well as acquisition of good quality μ-Raman spectra using a 532 nm laser.


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