503 Synthesis of rod liked carbon nanotube directly on Fe substrate by pulsed discharge plasma chemical vapor deposition

2010 ◽  
Vol 2010.59 (0) ◽  
pp. 279-280
Author(s):  
Soemsak Yooyen ◽  
Yasuyuki Suzuki ◽  
Shigeo Kotake ◽  
Mikio Noda
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Discharge Plasma ◽  
Chemical Vapor ◽  
Pulsed Discharge ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Pulsed Discharge Plasma

High-Quality Carbon Nanotube Growth at Low Temperature by Pulse-Excited Remote Plasma Chemical Vapor Deposition

2008 ◽  
Vol 1 ◽  
pp. 034004 ◽  
Author(s):  
Yuichi Yamazaki ◽  
Naoshi Sakuma ◽  
Masayuki Katagiri ◽  
Mariko Suzuki ◽  
Tadashi Sakai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Plasma Chemical Vapor Deposition ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition

2016 ◽  
Vol 8 (3) ◽  
pp. 636-639
Author(s):  
Hyunwoong Seo ◽  
Giichiro Uchida ◽  
Naho Itagaki ◽  
Kazunori Koga ◽  
Masaharu Shiratani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Discharge Plasma ◽  
Chemical Vapor ◽  
Nano Particles ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Influence of the Plasma Condition on the Morphology of Vertically Aligned Carbon Nanotube Films Grown by RF Plasma Chemical Vapor Deposition

2003 ◽  
Vol 10 (04) ◽  
pp. 611-615 ◽  
Author(s):  
Takashi Ikuno ◽  
Syunji Takahashi ◽  
Kazunori Kamada ◽  
Shigeharu Ohkura ◽  
Shin-Ich Honda ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Condition ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Bias ◽  
Vertically Aligned

Vertically aligned carbon nanotube (VACNT) films have been grown by RF plasma chemical vapor deposition (RF-PECVD) with a controlling plasma condition. From the in situ optical emission spectroscopy (OES) and self-bias measurements, we have investigated the relationship between the morphology of VACNTs and the plasma condition in PECVD. CH radical and atomic hydrogen peaks were prominent in the OES spectra of CH 4 plasma. The plasma condition was changed by varying the interelectrode distance in PECVD. With increasing interelectrode distance, the diameter and density of VACNTs increased as a result of the increase in plasma density, the fraction of CH radicals, and self-bias. It is likely that the fraction of CH radicals in plasma influences promotion of the growth of CNTs, while the self-bias induces their vertical alignment.

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