ABSTRACTWe have studied the growth of lattice mismatched semiconductors through the association of the Monte Carlo technique and the Valence Force Field (VFF) approximation. The Monte Carlo technique monitors the atomic motion in the deposited layer using the Arrhenius law and taking into account the impingment of atoms from the gas phase, intralayer and interlayer migrations of atoms and evaporation from the surface. The VFF approximation is used as an energy model to determine the local strain and stress inside the deposited layer by minimizing the total energy. This is performed after each single atomic motion. The strain is assumed to enhance the atomic motion by lowering the activation energy barrier related to the particular event. Results concerning the case of large lattice mismatches are presented. It is observed that the growing surface becomes rapidly rough, showing grooves with (111) facets. The strain relaxation occurs as a result of this roughening and allows the determination of the critical thickness. At higher lattice mismatches, it is seen that the layer orientation changes from(100) to (111) from the beginning.
Determination of the interaction potential from the pair distribution function: An inverse Monte Carlo technique
