Simulation of the Growth of Lattice Mismatched Semiconductors

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Djafari Rouhani ◽  
R. Malek ◽  
A.M. Gue ◽  
D. Esteve

ABSTRACTWe have studied the growth of lattice mismatched semiconductors through the association of the Monte Carlo technique and the Valence Force Field (VFF) approximation. The Monte Carlo technique monitors the atomic motion in the deposited layer using the Arrhenius law and taking into account the impingment of atoms from the gas phase, intralayer and interlayer migrations of atoms and evaporation from the surface. The VFF approximation is used as an energy model to determine the local strain and stress inside the deposited layer by minimizing the total energy. This is performed after each single atomic motion. The strain is assumed to enhance the atomic motion by lowering the activation energy barrier related to the particular event. Results concerning the case of large lattice mismatches are presented. It is observed that the growing surface becomes rapidly rough, showing grooves with (111) facets. The strain relaxation occurs as a result of this roughening and allows the determination of the critical thickness. At higher lattice mismatches, it is seen that the layer orientation changes from(100) to (111) from the beginning.

Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.


2014 ◽  
Vol 62 (1) ◽  
pp. 129-137
Author(s):  
A. Sawicki ◽  
J. Mierczyński

Abstract A basic set of experiments for the determination of mechanical properties of sands is described. This includes the determination of basic physical and mechanical properties, as conventionally applied in soil mechanics, as well as some additional experiments, which provide further information on mechanical properties of granular soils. These additional experiments allow for determination of steady state and instability lines, stress-strain relations for isotropic loading and pure shearing, and simple cyclic shearing tests. Unconventional oedometric experiments are also presented. Necessary laboratory equipment is described, which includes a triaxial apparatus equipped with local strain gauges, an oedometer capable of measuring lateral stresses and a simple cyclic shearing apparatus. The above experiments provide additional information on soil’s properties, which is useful in studying the following phenomena: pre-failure deformations of sand including cyclic loading compaction, pore-pressure generation and liquefaction, both static and caused by cyclic loadings, the effect of sand initial anisotropy and various instabilities. An important feature of the experiments described is that they make it possible to determine the initial state of sand, defined as either contractive or dilative. Experimental results for the “Gdynia” model sand are shown.


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