A rechargeable aqueous manganese-ion battery based on intercalation chemistry

Aqueous rechargeable metal batteries are intrinsically safe due to the utilization of low-cost and non-flammable water-based electrolyte solutions. However, the discharge voltages of these electrochemical energy storage systems are often limited, thus, resulting in unsatisfactory energy density. Therefore, it is of paramount importance to investigate alternative aqueous metal battery systems to improve the discharge voltage. Herein, we report reversible manganese-ion intercalation chemistry in an aqueous electrolyte solution, where inorganic and organic compounds act as positive electrode active materials for Mn2+ storage when coupled with a Mn/carbon composite negative electrode. In one case, the layered Mn0.18V2O5·nH2O inorganic cathode demonstrates fast and reversible Mn2+ insertion/extraction due to the large lattice spacing, thus, enabling adequate power performances and stable cycling behavior. In the other case, the tetrachloro-1,4-benzoquinone organic cathode molecules undergo enolization during charge/discharge processes, thus, contributing to achieving a stable cell discharge plateau at about 1.37 V. Interestingly, the low redox potential of the Mn/Mn2+ redox couple vs. standard hydrogen electrode (i.e., −1.19 V) enables the production of aqueous manganese metal cells with operational voltages higher than their zinc metal counterparts.

Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III–V semiconductors

Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to apply directly to the large-lattice-mismatched and heterovalent semiconductors because of the existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and the insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III–V systems as examples, the results have the same accuracy as what is a widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III–V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

Tin selenide (SnSe) has thermoelectric (TE) and photovoltaic (PV) applications due to its exceptional advantages, such as the remarkable figure of merit (ZT ≈ 2.6 at 923 K) and excellent optoelectronic properties. In addition, SnSe is nontoxic, inexpensive, and relatively abundant. These aspects make SnSe of great practical importance for the next generation of thermoelectric devices. Here, we report structural, optoelectronic, thermodynamic, and thermoelectric properties of the recently experimentally identified binary phase of tin monoselenide (π-SnSe) by using the density functional theory (DFT). Our DFT calculations reveal that π-SnSe features an optical bandgap of 1.41 eV and has an exceptionally large lattice constant (12.2 Å, P213). We report several thermodynamic, optical, and thermoelectric properties of this π-SnSe phase for the first time. Our finding shows that the π-SnSe alloy is exceptionally promising for the next generation of photovoltaic and thermoelectric devices at room and high temperatures.

Synthesis, Characterization, and Electromagnetic Wave Absorbing Properties of M12+–M24+ Substituted M-Type Sr-Hexaferrites

Mn–Ti, Zn–Ti, Zn–Zr substituted M-type Sr-hexaferrites (SrM), SrFe12−2xM1xM2xO19 (0 ≤ x ≤ 2.0, M1 = Mn or Zn; M2 = Ti or Zr) were synthesized, and their solubility, crystalline structure, and high-frequency properties were studied. Zn–Zr substitution caused a relatively large lattice parameter change and resulted in lower solubility (x ≤ 1.0) in the M-type phase compared with Mn–Ti and Zn–Ti substitutions. However, the ferromagnetic resonance frequency (fFMR) effectively decreased with increasing x in SrFe12−2xZnxZrxO19 (Zn–Zr:SrM) (0 ≤ x ≤ 1.0) and the electromagnetic wave (EM) absorption frequency also varied according to the shift in fFMR in the 7–18 GHz range. This is attributed to a gradual decrease in the magnetocrystalline anisotropy of Zn–Zr:SrM (0 ≤ x ≤ 1.0) with an increase in x. Zn–Zr:SrM (x = 0.9)–epoxy(10 wt%) composites exhibited a high EM absorption in the X-band (8–12 GHz) with the lowest reflection loss of <−45 dB. The sample with x = 0.8 showed a broad Ku band (12–18 GHz) absorption performance satisfying RL <−19 dB at 11 ≤ f ≤ 18 GHz.

Ge/Si Multilayer Epitaxy and Removal of Dislocations from Ge-nanosheet-channel MOSFETs

Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study. Large lattice mismatch Ge/Si multilayers were intentionally grown as the starting material rather than Ge/GeSi multilayers to acquire the benefits of the considerable difference in material properties of Ge and Si for realising selective etching. Flat Ge/Si multilayers were grown at a low temperature to preclude island growth. The shape of Ge nanosheets was almost retained after etching owing to the excellent selectivity. Additionally, dislocations were observed in suspended Ge nanosheets because of the absence of a Ge/Si interface and the disappearance of the dislocation-line tension force owing to the elongation of misfit dislocation at the interface. Forming gas annealing of the suspended Ge nanosheets resulted in a significant increase in the glide force compared to the dislocation-line tension force; the dislocations were easily removed because of this condition and the small size of the nanosheets. Based on this structure, a new mechanism of dislocation removal from suspended Ge nanosheet structures by annealing was described, which resulted in the structures exhibiting excellent gate control and electrical properties.

Optical Properties and Band Gap of Ternary PSN-PMN-PT Single Crystals

This study investigated the optical properties and the interband transition of a ternary [100]-oriented 6PSN-61PMN-33PT relaxor ferroelectric single crystal. Compared with the binary [100]-oriented PMN-32PT crystal, the [100]-oriented 6PSN-61PMN-33PT crystal exhibited excellent optical properties, including high transmittance, low refractive index, weak frequency dispersion, and low reflection and absorption coefficients. All these differences can be attributed to the structural changes of the 6PSN-61PMN-33PT crystal, such as its large lattice size and increased band gap. The crystal’s transmittance was significantly improved after alternating current electric field poling due to the increased domain size and the order domain structure. The largest transmittance for the 6PSN-61PMN-33PT crystal was up to 66%. Our experimental results indicate that the ternary 6PSN-61PMN-33PT ferroelectric single crystal has great application potential in the optical field.

Mid-Infrared ZnS Ridge Waveguide Fabricated by Femtosecond Laser Ablation Combined With Ion Irradiation

We have experimentally studied the fabrication of ridge waveguides in zinc sulfide (ZnS) crystal by femtosecond laser ablation combined with Kr8+ ion irradiation. At the wavelength of 4 μm, the waveguide at TE mode shows better guiding properties than TM mode. The transmission performance of the waveguide is improved by using thermal annealing technology to reduce the color centers and point defects in the waveguide. The waveguide propagation loss at TE mode at 4 μm wavelength is reduced to as low as 0.6 dB/cm after annealing. Raman spectroscopy shows that Kr8+ ion irradiation does not cause large lattice damage to ZnS crystal.