Research and Design of a Cluster Multimedia Storage System

2006 ◽  
Vol 43 (8) ◽  
pp. 1311
Author(s):  
Jiguang Wan
Keyword(s):  
Storage System ◽  
Multimedia Storage ◽  
Research And Design

Research and Design of the Distributed Mass Small File Storage System Based on WCF

2013 ◽  
Vol 765-767 ◽  
pp. 1087-1091
Author(s):  
Hong Lin ◽  
Shou Gang Chen ◽  
Bao Hui Wang
Keyword(s):  
Fault Tolerance ◽  
Distributed Computing ◽  
Data Storage ◽  
Large Scale ◽  
Storage System ◽  
Hardware Platform ◽  
File Storage ◽  
Computing Framework ◽  
Research And Design ◽  
Small File

Recently, with the development of Internet and the coming of new application modes, data storage has some new characters and new requirements. In this paper, a Distributed Computing Framework Mass Small File storage System (For short:Dnet FS) based on Windows Communication Foundation in .Net platform is presented, which is lightweight, good-expansibility, running in cheap hardware platform, supporting Large-scale concurrent access, and having certain fault-tolerance. The framework of this system is analyzed and the performance of this system is tested and compared. All of these prove this system meet requirements.

The research and design for a high availability object storage system

2008 ◽  
Author(s):  
Ling Zhan ◽  
Zhihu Tan ◽  
Peng Gu ◽  
Jiguang Wan
Keyword(s):  
Storage System ◽  
High Availability ◽  
Object Storage ◽  
Research And Design

Research and design of high speed mass image storage system

2009 ◽  
Author(s):  
Yu-feng Li ◽  
Rong-kun Xue ◽  
Fei Liang
Keyword(s):  
High Speed ◽  
Storage System ◽  
Image Storage ◽  
Research And Design

Ferroelectric Random Access Memory as a Non-Volatile Cache Solution in a Multimedia Storage System

2008 ◽  
Vol 1129 ◽  
Author(s):  
Dong Jin Jung ◽  
Kinam Kim
Keyword(s):  
Storage System ◽  
Critical Role ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Solid State Disk ◽  
Multimedia Storage ◽  
Life Tests ◽  
Ferroelectric Memory ◽  
Stress Simulation

AbstractWe demonstrate that ferroelectric memory is very eligible to become a non-volatile cache solution, in particular, in a multimedia storage system such as solid-state disk. It could provide benefits both of performance and of reliability. In performance, a FRAM cache allows us to rid overhead of power-off recovery. Random WRITE performance has been improved by 250%. In assertion of endurance, we investigate acceleration factors to evaluate cycle-to-failure of the ferroelectric memory both in device-level and in capacitor-level. What has been found is that ferroelectric memory cells have 6.0×1014 of the cycle-to-failure at the operational condition of 85 o C and 2.0V. This cycle-to-failure is well above lifetime READ/WRITE cycles of 9.5×1013 in such system. From 2-dimensional stress simulation, it has also been concluded that the number of dummy cells plays a critical role in qualifying the high temperature life tests.

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