Optical characterization of a four-medium thin film structure by real time spectroscopic ellipsometry: amorphous carbon on tantalum

1991 ◽  
Vol 30 (19) ◽  
pp. 2692 ◽  
Author(s):  
Yue Cong ◽  
IIsin An ◽  
K. Vedam ◽  
Robert W. Collins
2006 ◽  
Vol 15 (4-8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Yasuhiko Hayashi ◽  
N. Kamada ◽  
T. Soga ◽  
T. Jimbo

1992 ◽  
Vol 72 (7) ◽  
pp. 2823-2839 ◽  
Author(s):  
Anil R. Duggal ◽  
John A. Rogers ◽  
Keith A. Nelson

2013 ◽  
Vol 334-335 ◽  
pp. 294-296 ◽  
Author(s):  
N. Baydogan ◽  
K. Çilingiryan ◽  
A.B. Tugrul ◽  
Huseyin Cimenoglu ◽  
S.S. Yeşilkaya

rradiation of ZnO:Al thin film by reactor neutrons with neutron/gamma ratio at 1.44x104 (n.cm-2.s-1.mR-1) leads to a decrease in resistivity in this material. The observed effects in electrical resistivity are attributed to irradiation-induced formation of defects in the ZnO:Al thin film structure.


1994 ◽  
Vol 3 (1) ◽  
pp. 41-45 ◽  
Author(s):  
D. Blanc ◽  
A. Cachard ◽  
J.C. Pommier ◽  
J.F. Roux ◽  
J.L. Coutaz

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