Impact of third-order dispersion and three-photon absorption on mid-infrared time magnification via four-wave mixing in Si08Ge02 waveguides

2020 ◽  
Vol 59 (4) ◽  
pp. 1187
Author(s):  
Aihu Zheng ◽  
Qibing Sun ◽  
Leiran Wang ◽  
Mulong Liu ◽  
Chao Zeng ◽  
...  
2008 ◽  
Vol 8 (3) ◽  
pp. 1364-1370 ◽  
Author(s):  
Wenling Jia ◽  
Fengqi Guo ◽  
Elliot P. Douglas ◽  
Wenfang Sun

The two-photon absorption coefficients (β) and the third-order nonlinear susceptibilities (χ(3)) of several semiconductor nanoparticles (CdS, CdxAg1–xS, and core–shell CdS/Ag2S) that are confined and stabilized by random and block ionomers have been measured by nonlinear transmission and degenerate four-wave mixing techniques using 21 picosecond laser pulses at near-infrared spectral region. The imaginary part of the third-order nonlinear susceptibility that is related to the two-photon absorption coefficient was then calculated. The absorptive nonlinearity of the nanoparticles (2∼9 nm) was found to be dependent on the particle size, composition and wavelength, i.e., larger CdS particles exhibit higher two-photon absorption coefficients and the presence of Ag improves two-photon absorption of CdS nanoparticles. The obtained two-photon absorption coefficients of nanoparticles corrected for their volume fraction in solution are significantly greater that those of corresponding bulk semiconductors.


2013 ◽  
Vol 27 (21) ◽  
pp. 1350149
Author(s):  
BAKTASH HEKMAT ◽  
VAHID AHMADI ◽  
ELHAM DARABI

We design a quantum cascade (QC) intersubband structure for four-wave mixing (FWM) generation from In 0.53 Ga 0.47 As / In 0.52 Al 0.48 As in the mid-infrared spectral region which can be described by third-order nonlinear optical susceptibility. In this structure, increasing FWM is accomplished by band engineering which modify energy of subbands. To analyze FWM characteristics in a QC structure, the evolution in time and spectral domain of pump and probe input optical pulses with different frequencies during propagation is calculated and simulated by using finite-difference beam propagation method. Central frequencies of pump and probe pulses which are used for driving the amplifier are 37.97 THz and 32.61 THz, respectively. Third order susceptibility responsible for FWM resonance nonlinearity of the structure is enhanced by two orders of magnitude. As power of input pulses rises, the value of the FWM output signal increases but the pulse loses its initial shape. Gain saturation and dispersion play a major role in shaping the output pulse. Results reveal that the FWM optical pulse characteristics are highly sensitive to the pulse power and QC parameters in the time and frequency domains.


2019 ◽  
Vol 33 (21) ◽  
pp. 1950241
Author(s):  
Peng Xie ◽  
Jiarui Liu ◽  
Yu Wen ◽  
Zishen Wan ◽  
Yishan Wang

The influences of second-order dispersion (SOD) and third-order dispersion (TOD) on spectral properties of wavelength conversion based on FWM at mid-infrared region (mid-IR) are theoretically investigated in a silicon nitride waveguide. It is found that the SOD and TOD can affect the frequency shift and temporal profiles of idler pulses. Moreover, the temporal and frequency spectrum of output signal are also discussed with different SODs and TODs. Meanwhile, the numerical simulation results imply that the efficiency of FWM process will be reduced and the wavelength range of phase-match will be shifted due to the change of SOD or TOD.


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Nils Dessmann ◽  
Nguyen H. Le ◽  
Viktoria Eless ◽  
Steven Chick ◽  
Kamyar Saeedi ◽  
...  

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.


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