Wavelength Shift of InP-Based InAs Quantum Dot Lasers Above Room Temperature
2007 ◽
Vol 7
(12)
◽
pp. 4443-4446
◽
Keyword(s):
For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.
Keyword(s):
Keyword(s):
2005 ◽
Vol 44
(No. 35)
◽
pp. L1103-L1104
◽
Keyword(s):
Keyword(s):
2007 ◽
Vol 06
(03n04)
◽
pp. 291-296
◽
2000 ◽
Vol 12
(6)
◽
pp. 591-593
◽
Keyword(s):
2000 ◽
Vol 12
(3)
◽
pp. 227-229
◽