Wide Timability and Large Mode-Suppression in a Multi-section Semiconductor Laser using Sampled Gratings

1992 ◽  
Author(s):  
V. Jayaraman ◽  
L.A. Coldren ◽  
S. Denbaars ◽  
A. Mathur ◽  
P.D. Dapkus
Keyword(s):  
Semiconductor Laser ◽  
Mode Suppression

Improvement of side-mode suppression ratio of a single-mode SCC semiconductor laser

1985 ◽  
Vol 21 (19) ◽  
pp. 877 ◽  
Author(s):  
Zhou Bingkun ◽  
Wang Jianglin ◽  
Zhang Hanyi
Keyword(s):  
Semiconductor Laser ◽  
Suppression Ratio ◽  
Single Mode ◽  
Side Mode Suppression Ratio ◽  
Mode Suppression ◽  
Side Mode

scholarly journals Side mode suppression using a doped fiber in a long external-cavity semiconductor laser operating at 1490 nm

2006 ◽  
Vol 14 (20) ◽  
pp. 9042 ◽  
Author(s):  
Runnan Liu ◽  
Irina A. Kostko ◽  
Ke Wu ◽  
Raman Kashyap
Keyword(s):  
Semiconductor Laser ◽  
External Cavity ◽  
Mode Suppression ◽  
Side Mode

Widely wavelength switchable V-coupled-cavity semiconductor laser with ∼40 dB side-mode suppression ratio

2011 ◽  
Vol 36 (21) ◽  
pp. 4230 ◽  
Author(s):  
Jialiang Jin ◽  
Lei Wang ◽  
Tingting Yu ◽  
Yin Wang ◽  
Jian-Jun He
Keyword(s):  
Semiconductor Laser ◽  
Suppression Ratio ◽  
Side Mode Suppression Ratio ◽  
Mode Suppression ◽  
Side Mode ◽  
Coupled Cavity

scholarly journals Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

2021 ◽  
Vol 11 (4) ◽  
pp. 1531
Author(s):  
Chunkao Ruan ◽  
Yongyi Chen ◽  
Li Qin ◽  
Peng Jia ◽  
Yugang Zeng ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Continuous Wave ◽  
Longitudinal Mode ◽  
Distributed Feedback ◽  
Continuous Wave Output Power ◽  
Semiconductor Laser Diode ◽  
Grating Fabrication ◽  
Mode Suppression ◽  
Micrometer Scale ◽  
Dfb Semiconductor Laser

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

scholarly journals Optically-Injected-Semiconductor-Laser-Based Tunable Dual-Frequency Optoelectronic Oscillator under Subharmonic Microwave Modulation

2021 ◽  
Vol 11 (9) ◽  
pp. 3961
Author(s):  
Jiayi Zhao ◽  
Yiying Gu ◽  
Jian Li ◽  
Xiaozhou Li ◽  
Mingshan Zhao ◽  
...  
Keyword(s):  
Phase Noise ◽  
Semiconductor Laser ◽  
Frequency Offset ◽  
Optical Injection ◽  
Dual Frequency ◽  
Optoelectronic Oscillator ◽  
Mode Suppression ◽  
Microwave Signals ◽  
Microwave Modulation ◽  
Tunable Frequency

To obtain low-phase-noise microwave signals with a widely tunable frequency range, an optoelectronic oscillator (OEO) was constructed on the basis of an optically injected semiconductor laser (OISL) for the generation of high-quality microwave signals. Our OEO relied on the effect of wavelength-selective amplification and the period-one (P1) oscillation under optical injection. The signal’s frequency stability, side-mode-suppression ratio (SMSR) and linewidth were optimized by the subharmonic microwave modulation technique in the OEO loop. The experimental results showed that the frequency of the signal obtained by the proposed OEO could be tuned up to 18 GHz. Using the dual-loop OEO structure, the SMSR was increased to 55 dB. Moreover, the phase noise of the obtained microwave signal was lower than −81 dBc/Hz at 1 kHz frequency offset and −119 dBc/Hz at 10 kHz frequency offset. This was achieved by introducing subharmonic microwave modulation in the OEO loop, respectively. Furthermore, via the utilization of a Fabry–Perot laser diode (FP-LD) in the proposed structure, a dual-loop OEO with different dual-frequency configurations (which could be tuned up to 12 and 18 GHz) was obtained.

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