Mechanism of the ultraviolet laser ablation of polymethyl methacrylate at 193 and 248 nm: laser-induced fluorescence analysis, chemical analysis, and doping studies

1986 ◽  
Vol 3 (5) ◽  
pp. 785 ◽  
Author(s):  
R. Srinivasan ◽  
B. Braren ◽  
R. W. Dreyfus ◽  
L. Hadel ◽  
D. E. Seeger
1990 ◽  
Vol 68 (4) ◽  
pp. 1842-1847 ◽  
Author(s):  
R. Srinivasan ◽  
Bodil Braren ◽  
Kelly G. Casey

1988 ◽  
Vol 129 ◽  
Author(s):  
Masahiro Kawasaki ◽  
Hiroyasu Sato ◽  
Gen Inoue

Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.


2001 ◽  
Vol 40 (Part 2, No. 8A) ◽  
pp. L805-L806 ◽  
Author(s):  
Takashi Mito ◽  
Takuji Tsujita ◽  
Hiroshi Masuhara ◽  
Nobuaki Hayashi ◽  
Kenkichi Suzuki

2004 ◽  
Vol 76 (5) ◽  
pp. 1249-1256 ◽  
Author(s):  
Gregory L. Klunder ◽  
Patrick M. Grant ◽  
Brian D. Andresen ◽  
Richard E. Russo

1991 ◽  
Vol 236 ◽  
Author(s):  
Peter R. Herman ◽  
Boyi Chen ◽  
David J. Moore ◽  
Mark Canaga-Retnam

AbstractExcimer lasers sources of 193nm and 157 nm wavelength were used to obtain new photoablation etching rates for several materials of interest to the microelectronics industry. The harder 157nm radiation provided lower ablation rates and smaller threshold fluences for Polyimide and Polymethyl Methacrylate (PMMA) than with 193nm. For normally robust materials like quartz and Teflon (PTFE), the 157nm laser produced clean and smooth ablation sites with low threshold fluences of 620mJ/cm2 and 68mJ/cm2, respectively, features impossible to obtain with conventional excimer lasers at longer wavelengths. The data should help define new micromachining applications of these two materials for the electronic, optical or medical industry. Results are also reported for GaAs and InP based materials which are found to undergo moderate etch rates of 30-80nm/pulse at fluences of ∼3J/cm2, but suffer thermal damage and material segregation due to surface melting.


2014 ◽  
Vol 1 (2) ◽  
pp. 112-115
Author(s):  
Thenmozhi K ◽  
Karthika K ◽  
Manian S

The objective of the study is to cover the pharmacognostical and preliminary phytochemical screening of traditional medicinal plant, Kedrostis foetidissima belonging to the family Cucurbitaceae. This study includes organoleptic characters, physico-chemical analysis, fluorescence analysis, behaviour of leaf powder with different chemical reagents, phytochemical extraction, extractive yield and qualitative phytochemical screening. The preliminary screening revealed the presence of alkaloids, flavonoids, steroids, tannins, phenolics, glycosides, carbohydrates, proteins and aminoacids which explains that the plant must have valuable medicinal properties and so it can be explored


2005 ◽  
Vol 26 (13) ◽  
pp. 2599-2607 ◽  
Author(s):  
Michaela Wirtz ◽  
Claus A. Schumann ◽  
Marc Schellenträger ◽  
Siegmar Gäb ◽  
Jochen vom Brocke ◽  
...  

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