scholarly journals Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode

2014 ◽  
Vol 22 (7) ◽  
pp. 8367 ◽  
Author(s):  
Horng-Shyang Chen ◽  
Zhan Hui Liu ◽  
Pei-Ying Shih ◽  
Chia-Ying Su ◽  
Chih-Yen Chen ◽  
...  
2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.


2012 ◽  
Vol 101 (12) ◽  
pp. 121919 ◽  
Author(s):  
Suman De ◽  
Arunasish Layek ◽  
Sukanya Bhattacharya ◽  
Dibyendu Kumar Das ◽  
Abdul Kadir ◽  
...  

2012 ◽  
Vol 37 (19) ◽  
pp. 3960 ◽  
Author(s):  
Mohamed Said Rouifed ◽  
Papichaya Chaisakul ◽  
Delphine Marris-Morini ◽  
Jacopo Frigerio ◽  
Giovanni Isella ◽  
...  

1993 ◽  
Vol 74 (10) ◽  
pp. 6247-6250 ◽  
Author(s):  
W. Q. Chen ◽  
S. M. Wang ◽  
T. G. Andersson ◽  
J. Thordson

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