Reduced blue shift in screening the quantum-confined Stark effect of an InGaN/GaN quantum well with the prestrained growth of a light-emitting diode

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

Applied Physics Letters ◽

10.1063/1.4754079 ◽

2012 ◽

Vol 101 (12) ◽

pp. 121919 ◽

Cited By ~ 34

Author(s):

Suman De ◽

Arunasish Layek ◽

Sukanya Bhattacharya ◽

Dibyendu Kumar Das ◽

Abdul Kadir ◽

...

Keyword(s):

Quantum Well ◽

Stark Effect ◽

Light Emitting Diodes ◽

Light Emitting ◽

Quantum Confined Stark Effect ◽

Quantum Confined ◽

Luminescent Centers

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Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode

IEEE Photonics Technology Letters ◽

10.1109/68.215264 ◽

1993 ◽

Vol 5 (5) ◽

pp. 509-511 ◽

Cited By ~ 4

Author(s):

J.E. Fouquet ◽

W.V. Sorin ◽

G.R. Trott ◽

M.J. Ludowise ◽

D.M. Braun

Keyword(s):

Stark Effect ◽

Light Emitting Diode ◽

Low Back ◽

Light Emitting ◽

Quantum Confined Stark Effect ◽

Quantum Confined

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Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region

Applied Physics Express ◽

10.1143/apex.2.021001 ◽

2009 ◽

Vol 2 ◽

pp. 021001 ◽

Cited By ~ 29

Author(s):

Songbek Che ◽

Akihiko Yuki ◽

Hiroshi Watanabe ◽

Yoshihiro Ishitani ◽

Akihiko Yoshikawa

Keyword(s):

Quantum Well ◽

Stark Effect ◽

Light Emitting Diodes ◽

Light Emitting ◽

Quantum Confined Stark Effect ◽

Quantum Confined

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The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽

10.3390/photonics8020042 ◽

2021 ◽

Vol 8 (2) ◽

pp. 42

Author(s):

Jie Zhao ◽

Weijiang Li ◽

Lulu Wang ◽

Xuecheng Wei ◽

Junxi Wang ◽

...

Keyword(s):

Stark Effect ◽

Light Emitting Diodes ◽

Light Emitting Diode ◽

Strain Relaxation ◽

Blue Shift ◽

Peak Position ◽

Excitation Power ◽

Light Extraction Efficiency ◽

Excitation Power Density ◽

Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

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