Люминесценция дитолуоилметаната дифторида бора. Образование J-агрегатов

The processes of the formation of J-aggregates during the dissolution 2,2-difluoro-4,6-di(4’-methylphenyl)-1,3,2-dioxaborine crystals (1) and their subsequent dissociation have been studied by absorption and luminescence spectroscopy and quantum-chemical modeling. It is shown that two luminescent centers are observed in the solution 1: monomeric luminescence and luminescence of J-aggregates (dual luminescence). Evolution of absorption, luminescence excitation and luminescence spectra is observed over time, indicating a slow dissociation of J-aggregates.

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI1–3) at the wavelength of 1002.8 nm (DI1), 1004.7 nm (DI2), and 1006.1 nm (DI3) after high dose implantation (> 4 × 1013 cm-2) and high temperature annealing (> 1700○C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 1022 cm-3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800○C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000○C. These spectra signatures are strongly reduced at 1200○C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700○C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.

Cathodoluminescence of carbon-related defects in hexagonal boron nitride

Hexagonal boron nitride is a wide band gap semiconductor exhibiting various luminescence bands in visible and near ultraviolet range, which can be used as single photon source. The luminescence band with zero phonon line at 4.1 eV is commonly ascribed to the carbon impurity introduced during crystal growth. In this paper we provide experimental evidence that carbon-related luminescent centers can be introduced in hBN by local electron irradiation in the chamber of scanning electron microscope at room temperature that can be used as a technique for the nanofabrication of single photon source devices with desired pattern.

Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We study structural and photoluminescent properties of two different ALD deposited Eu doped CaS thin films: Eu(thd)3 which reacted with H2S forming CaS:Eu phosphor, or with O3 originating a CaS:EuO phosphor. It was found that the emission wavelength of CaS:EuO was 625.8 nm whereas CaS:Eu was 647 nm. Thus, the inclusion of O2− ions by ALD in a CaS:Eu phosphor results in the blue-shift of 21.2 nm. Our results show that ALD can be an effective way to introduce additional elements (e.g., anionic elements) to engineer the physical properties (e.g., inorganic phosphor emissions) for photonics and optoelectronics.

EPR study of paramagnetic centers in SiO2:C: Zn nanocomposites obtained by infiltration of fumed silica with luminescent Zn(acac)2 solution

Silica-carbon with zinc (SiO2:C:Zn) nanocomposites obtained via infiltration with aged luminescent zinc acetylacetonate (Zn(acac)2) ethanol solution of two concentrations (1 or 4%) into the fumed silica (SiO2) matrix have been studied using EPR within the temperature range 6…296 K before and after thermal annealing. The EPR spectrum of SiO2:C:Zn nanocomposites consists of three signals with the Lorentzian lineshape corresponding to paramagnetic centers with S = 1/2, which are related to carbon dangling bonds (CDB) (g = 2.0029(3)), silicon dangling bonds (g = 2.0062(3)) and oxygen-centered carbon-related radicals (CRR) (g = 2.0042(3)). A small EPR linewidth (<1 mT) observed for CDB and oxygen-centered CRR allows us to conclude that they are in the sp3-hybridized state. It was found that the temperature dependence of the EPR signal integrated intensity of the CDB and oxygen-centered CRR follows the Curie–Weiss law with a small positive value of the Curie–Weiss constant, which indicates that the weak ferromagnetic exchange interaction takes place in the spin system of CDB and oxygen-centered CRR. It was supposed that the carbon-related centers are clustered in SiO2:C:Zn nanocomposites. We assume that the oxygen-centered CRR in the sp3-hybridized state are associated with luminescent centers in previously reported aged Zn(acac)2/C2H5OH solution.