Highly efficient QLEDs based on Ag–In–Zn–S QDs were achieved by managing the charge carrier distribution and the effect of hole transport layers on the device performance was investigated systematically.
All-solution-processed red-emitting InP/ZnS-based QD-LEDs with a record ηEQE of 4.24% are successfully fabricated through the compositional engineering of colloidal ZnO NPs, which act as the electron transport layers.
Herein, a novel hole transport polymer, P-CzAc, for solution-processed green quantum dot light-emitting diodes (QD-LEDs) was synthesized. P-CzAc consists of a polystyrene backbone and 10-(9H-carbazol-3-yl)-9,9-dimethyl-9,10-dihydroacridine as side-chain pendants. The design...