scholarly journals Proposal for an ultra-broadband polarization beam splitter using an anisotropy-engineered Mach-Zehnder interferometer on the x-cut lithium-niobate-on-insulator

2020 ◽  
Vol 28 (8) ◽  
pp. 10899 ◽  
Author(s):  
Hongnan Xu ◽  
Daoxin Dai ◽  
Liu Liu ◽  
Yaocheng Shi
2011 ◽  
Vol 284 (1) ◽  
pp. 490-493 ◽  
Author(s):  
Xiyao Chen ◽  
Zexuan Qiang ◽  
Deyin Zhao ◽  
Yufei Wang ◽  
Hui Li ◽  
...  

2020 ◽  
Vol 59 (23) ◽  
pp. 7083
Author(s):  
Shashank Awasthi ◽  
Aditya Biswas ◽  
Sanjeev Kumar Metya ◽  
Alak Majumder

2019 ◽  
Vol 11 (5) ◽  
pp. 10
Author(s):  
Jiri Stavek

In our approach we have combined knowledge of Old Masters (working in this field before the year 1905), New Masters (working in this field after the year 1905) and Dissidents under the guidance of Louis de Broglie and David Bohm. In our model the quantum particle is represented as the Huygens-de Broglie’s particle on the helical path (full wave) guided by the Newton-Bohm entangled helical evolute (Bohmian Pilot Wave). These individual Huygens - de Broglie particles in the Young - Feynman double - slit experiment react with Wilhelm Wien’s photons that are always present inside of the apparatus (Wien’s displacement law). Wilhelm Wien’s photons form collectively the Wien filter guiding the Huygens - de Broglie particles through the double - slit barrier towards a detector (BohEmian Pilot Wave). The interplay of those events creates the observed interference pattern. In the very well-known formula describing the intensity of double-slit diffraction patterns we have newly introduced the concept curvature κ of the Huygens - de Broglie particle and thus giving a physical interpretation for the Newton - Bohm guiding wave (the Bohmian Pilot Wave): for photons κ = π/λ, for electrons κ = 2π/λ. Moreover, we have introduced into that formula the expression λmax from the Wien’s displacement law to describe geometry of the double - slit barrier. We propose to modify the value λmax by the change of the system temperature. There is a second experimental possibility - we can insert into those slits filters to remove Wien’s photons while the Huygens - de Broglie particles continue towards a detector - we should observe the particle behavior. The similar situation might occur in the Mach - Zehnder interferometer. In this case the individual Huygens - de Broglie particle reacts in the first beam splitter with the Wien photon: the Huygens - de Broglie particle goes through one path while the Wien photon goes through the second path. In the second beam splitter they interact again and create the interference pattern on one detector. We can experimentally modify the resulting interference pattern in the Mach - Zehnder interferometer - by the temperature change of the system or by inserting filters to remove Wien’s photons from one or both paths. Can it be that Nature cleverly creates those interference patterns while the Bohmian pilot wave and the BohEmian pilot wave are hidden in plain sight? We want to pass this concept into the hands of Readers of this Journal better educated in the Mathematics and Physics.


Author(s):  
Nor Hidayah Roslan ◽  
Aziati H. Awang ◽  
Mohd Hanapiah M. Yusoff ◽  
Ahmad Rifqi Md Zain

<span>In this study, the low-group velocity slow-light mach-zehnder interferometer (MZI) modulator, low loss and high efficiency for two modulator substrate lithium niobate (LN) and silicon were presented and optimized at 1.55µm operating wavelength. The high power consumption of conventional modulator was the major drawback in the operation of modulators. Therefore, it was a good time for low-power modulator design and development and to compare the LN and Silicon modulator on the phase shifted using the slow-light technique by designing the full MZI modulator consisting of splitter and combiner on both substrates. The phase shift of LN is 2% compared with the silicon 0.09% and higher phase shift give better performance with low power consumption due to the change of modulating voltage of the MZI modulator for LN while the silicon depends on modulating voltage manipulating concentration of charge carrier in doped silicon.</span>


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