scholarly journals Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes

2021 ◽  
Vol 29 (21) ◽  
pp. 33992
Author(s):  
Yufei Hou ◽  
Degang Zhao ◽  
Ping Chen ◽  
Feng Liang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Hole Injection ◽  
Injection Efficiency

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 56 (6) ◽  
pp. 060001
Author(s):  
田康凯 Tian Kangkai ◽  
楚春双 Chu Chunshuang ◽  
毕文刚 Bi Wengang ◽  
张勇辉 Zhang Yonghui ◽  
张紫辉 Zhang Zihui
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Efficiency Improvement ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

2012 ◽  
Vol 112 (11) ◽  
pp. 113105 ◽  
Author(s):  
P. Chen ◽  
M. X. Feng ◽  
D. S. Jiang ◽  
D. G. Zhao ◽  
Z. S. Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer

Injection efficiency in AlGaN-based UV laser diodes

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2384-2386 ◽  
Author(s):  
Kengo Nagata ◽  
Kenichiro Takeda ◽  
Yoshinori Oshimura ◽  
Kosuke Takehara ◽  
Hiroki Aoshima ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Uv Laser ◽  
Injection Efficiency

43.1:Invited Paper: Demonstrating Ideal Injection Efficiency & Enabling Cost Effective Manufacturing with Solution Processed Hole Injection Layers

2013 ◽  
Vol 44 (1) ◽  
pp. 593-596 ◽  
Author(s):  
Mathew Mathai ◽  
Venkataramanan Seshadri ◽  
Neetu Chopra ◽  
Eli Scott ◽  
Christopher Brown ◽  
...  
Keyword(s):  
Cost Effective ◽  
Hole Injection ◽  
Solution Processed ◽  
Injection Efficiency

Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

2013 ◽  
Vol 19 (4) ◽  
pp. 1500705-1500705 ◽  
Author(s):  
Mei-Xin Feng ◽  
Jian-Ping Liu ◽  
Shu-Ming Zhang ◽  
De-Sheng Jiang ◽  
Zeng-Cheng Li ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Waveguide Layer ◽  
Design Considerations

Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers

2021 ◽  
Vol 130 (18) ◽  
pp. 183104
Author(s):  
Liwen Cheng ◽  
Jiayi Zhang ◽  
Jundi Wang ◽  
Jun Zhang ◽  
Jinpeng Yang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Optical Field ◽  
Hole Injection ◽  
Electron Leakage

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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