Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers

2021 ◽  
Vol 130 (18) ◽  
pp. 183104
Author(s):  
Liwen Cheng ◽  
Jiayi Zhang ◽  
Jundi Wang ◽  
Jun Zhang ◽  
Jinpeng Yang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Optical Field ◽  
Hole Injection ◽  
Electron Leakage

scholarly journals Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes

2006 ◽  
Vol 100 (8) ◽  
pp. 084509 ◽  
Author(s):  
M. R. Brown ◽  
R. J. Cobley ◽  
K. S. Teng ◽  
P. Rees ◽  
S. P. Wilks ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Multiple Quantum ◽  
Electron Leakage ◽  
Barrier Effects

High-power 980-nm ridge waveguide laser diodes including an asymmetrically expanded optical field normal to the active layer

2002 ◽  
Vol 38 (8) ◽  
pp. 1081-1088 ◽  
Author(s):  
K.I. Shigihara ◽  
K. Kawasaki ◽  
Y. Yoshida ◽  
S. Yamamura ◽  
T. Yagi ◽  
...  
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Optical Field ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

scholarly journals Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 334
Author(s):  
Barsha Jain ◽  
Ravi Teja Velpula ◽  
Moulik Patel ◽  
Sharif Md. Sadaf ◽  
Hieu Pham Trung Nguyen
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electron Leakage ◽  
Deep Ultraviolet

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1−x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EBL due to the formation of positive sheet polarization charges at the heterointerface of the last quantum barrier (QB)/EBL. Subsequently, the hole injection efficiency of the LED is severely limited. In this regard, we propose an EBL-free AlGaN deep UV LED structure using graded staircase quantum barriers (GSQBs) instead of conventional QBs without affecting the hole injection efficiency. The reported structure exhibits significantly reduced thermal velocity and mean free path of electrons in the active region, thus greatly confines the electrons over there and tremendously decreases the electron leakage into the p-region. Moreover, such specially designed QBs reduce the quantum-confined Stark effect in the active region, thereby improves the electron and hole wavefunctions overlap. As a result, both the internal quantum efficiency and output power of the GSQB structure are ~2.13 times higher than the conventional structure at 60 mA. Importantly, our proposed structure exhibits only ~20.68% efficiency droop during 0–60 mA injection current, which is significantly lower compared to the regular structure.

scholarly journals Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes

2021 ◽  
Vol 29 (21) ◽  
pp. 33992
Author(s):  
Yufei Hou ◽  
Degang Zhao ◽  
Ping Chen ◽  
Feng Liang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Hole Injection ◽  
Injection Efficiency

scholarly journals Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2070
Author(s):  
Liwen Cheng ◽  
Zhenwei Li ◽  
Jiayi Zhang ◽  
Xingyu Lin ◽  
Da Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Laser Power ◽  
Laser Diodes ◽  
Hole Injection ◽  
Energy Bands ◽  
Recombination Rates ◽  
Current Voltage ◽  
Performance Curves ◽  
Voltage Performance

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

Influence of Optical Field Distribution on GaN-Based Green Laser Diodes

2020 ◽  
Vol 47 (7) ◽  
pp. 0701018
Author(s):  
梁锋 Liang Feng ◽  
赵德刚 Zhao Degang ◽  
江德生 Jiang Desheng ◽  
刘宗顺 Liu Zongshun ◽  
朱建军 Zhu Jianjun ◽  
...  
Keyword(s):  
Field Distribution ◽  
Laser Diodes ◽  
Green Laser ◽  
Optical Field

Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs

2021 ◽  
Vol 42 (07) ◽  
pp. 897-903
Author(s):  
Wei-dong WANG ◽  
◽  
Chun-shuang CHU ◽  
Dan-yang ZHANG ◽  
Wen-gang BI ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Electron Leakage
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