Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

2013 ◽  
Vol 47 (9) ◽  
pp. 1258-1263 ◽  
Author(s):  
A. A. Petukhov ◽  
B. E. Zhurtanov ◽  
K. V. Kalinina ◽  
N. D. Stoyanov ◽  
H. M. Salikhov ◽  
...  
Keyword(s):  
High Temperature ◽  
Potential Barrier ◽  
High Potential ◽  
Light Emitting ◽  
High Potential Barrier

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 56 (6) ◽  
pp. 060001
Author(s):  
田康凯 Tian Kangkai ◽  
楚春双 Chu Chunshuang ◽  
毕文刚 Bi Wengang ◽  
张勇辉 Zhang Yonghui ◽  
张紫辉 Zhang Zihui
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Efficiency Improvement ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 334
Author(s):  
Barsha Jain ◽  
Ravi Teja Velpula ◽  
Moulik Patel ◽  
Sharif Md. Sadaf ◽  
Hieu Pham Trung Nguyen
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electron Leakage ◽  
Deep Ultraviolet

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1−x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EBL due to the formation of positive sheet polarization charges at the heterointerface of the last quantum barrier (QB)/EBL. Subsequently, the hole injection efficiency of the LED is severely limited. In this regard, we propose an EBL-free AlGaN deep UV LED structure using graded staircase quantum barriers (GSQBs) instead of conventional QBs without affecting the hole injection efficiency. The reported structure exhibits significantly reduced thermal velocity and mean free path of electrons in the active region, thus greatly confines the electrons over there and tremendously decreases the electron leakage into the p-region. Moreover, such specially designed QBs reduce the quantum-confined Stark effect in the active region, thereby improves the electron and hole wavefunctions overlap. As a result, both the internal quantum efficiency and output power of the GSQB structure are ~2.13 times higher than the conventional structure at 60 mA. Importantly, our proposed structure exhibits only ~20.68% efficiency droop during 0–60 mA injection current, which is significantly lower compared to the regular structure.

MgO thickness dependence of spin injection efficiency in spin-light emitting diodes

2008 ◽  
Vol 93 (15) ◽  
pp. 152102 ◽  
Author(s):  
Y. Lu ◽  
V. G. Truong ◽  
P. Renucci ◽  
M. Tran ◽  
H. Jaffrès ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Spin Injection ◽  
Thickness Dependence ◽  
Injection Efficiency ◽  
Light Emitting

Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3398-3401
Author(s):  
Soichiro Nozoe ◽  
Nobuaki Kinoshita ◽  
Masaki Matsuda
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Mott Insulator ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Short Time

By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2·2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2·2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2·2CHCl3 can work as useful hole-injection and transport material in OLEDs.

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