High Power Semiconductor Laser Diodes for OTDRs

1996 ◽  
Author(s):  
Nobuo Tomita ◽  
Mitsuhiro Tateda
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Diodes ◽  
Power Semiconductor ◽  
Semiconductor Laser Diodes

High Power Semiconductor Laser Diodes for OTDRs

1996 ◽  
Author(s):  
Y. Sasaki ◽  
Y. Furushima ◽  
T. Hosoda ◽  
T. Murakami ◽  
H. Hasumi
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Diodes ◽  
Power Semiconductor ◽  
Semiconductor Laser Diodes

Three-dimensional failure analysis of high power semiconductor laser diodes operated in vacuum

2007 ◽  
Vol 102 (12) ◽  
pp. 123104 ◽  
Author(s):  
Terence S. Yeoh ◽  
John A. Chaney ◽  
Martin S. Leung ◽  
Neil A. Ives ◽  
Z. D. Feinberg ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Semiconductor Laser ◽  
High Power ◽  
Laser Diodes ◽  
Three Dimensional ◽  
Power Semiconductor ◽  
Semiconductor Laser Diodes

Analysis of origin of measured 1/ f noise in high-power semiconductor laser diodes far below threshold current

2016 ◽  
Vol 59 ◽  
pp. 55-59 ◽  
Author(s):  
Jian Guan ◽  
Shuxu Guo ◽  
Jinyuan Wang ◽  
Min Tao ◽  
Junsheng Cao ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Diodes ◽  
Threshold Current ◽  
Power Semiconductor ◽  
Semiconductor Laser Diodes

Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

2012 ◽  
Vol 55 (4) ◽  
pp. 883-887 ◽  
Author(s):  
MeiXin Feng ◽  
ShuMing Zhang ◽  
DeSheng Jiang ◽  
Hui Wang ◽  
JianPing Liu ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Diodes ◽  
Semiconductor Laser Diodes ◽  
Facet Coating

Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste

2012 ◽  
Vol 134 (4) ◽  
Author(s):  
Yi Yan ◽  
Xu Chen ◽  
Xingsheng Liu ◽  
Yunhui Mei ◽  
Guo-Quan Lu
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Near Field ◽  
Laser Diodes ◽  
Acoustic Microscopy ◽  
High Power Laser ◽  
Power Laser ◽  
Power Semiconductor ◽  
Die Bonding ◽  
Nanosilver Paste

Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.

The Research of Controlling Constant Temperature for Semiconductor Laser Diodes

2013 ◽  
Vol 552 ◽  
pp. 398-404
Author(s):  
Duan Yuan Bai ◽  
Xin Gao ◽  
Bao Xue Bo
Keyword(s):  
Semiconductor Laser ◽  
Constant Temperature ◽  
Pid Controller ◽  
Laser Diodes ◽  
Tuning Parameter ◽  
Fuzzy Pid ◽  
Power Semiconductor ◽  
Fuzzy Pid Controller ◽  
Self Tuning ◽  
Semiconductor Laser Diodes

This paper introduces two types of precise temperature controllers for high power semiconductor laser diodes. We apply a category of self-tuning parameter fuzzy-PID controller，and a kind of neuronal network optimized rules fuzzy-PID controller to realize stable temperature controlling. we simulate these two methods by Matlab. The result proves that the new method has more superiority than traditional means, such as PID controlling, etc. And further improvement on constant temperature control will inevitably promote the reliability of LD.

High-power and reliable semiconductor laser diodes for WDM applications

2004 ◽  
Author(s):  
Manijeh Razeghi ◽  
Steven Slivken ◽  
Y. S. Park
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Laser Diodes ◽  
Semiconductor Laser Diodes
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