Ultrafast, room-temperature, resonance-enhanced third-order optical susceptibility tensor of an AlGaAs/GaAs quantum well

1991 ◽  
Vol 16 (12) ◽  
pp. 901 ◽  
Author(s):  
H. Q. Le ◽  
S. Di Cecca
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Third Order ◽  
Susceptibility Tensor ◽  
Optical Susceptibility

Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well

2008 ◽  
Vol 39 (12) ◽  
pp. 1654-1658 ◽  
Author(s):  
Zhihong Chen ◽  
Duanzheng Yao ◽  
Xi Zhang ◽  
Tianhong Fang
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Third Order ◽  
Polaron Effect ◽  
Optical Susceptibility ◽  
Cdse Quantum Dot

λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating

2010 ◽  
Vol 97 (11) ◽  
pp. 111113 ◽  
Author(s):  
J. P. Commin ◽  
K. Kennedy ◽  
D. G. Revin ◽  
S. Y. Zhang ◽  
A. B. Krysa ◽  
...  
Keyword(s):  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Distributed Feedback ◽  
Third Order ◽  
Quantum Cascade ◽  
Cascade Lasers

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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