Enhanced third-harmonic generation in Si-compatible epsilon-near-zero indium tin oxide nanolayers

Abstract Optical nanoantennas have attracted a lot of research interest over the last decade owing to their unique characteristics in concentrating far-field radiation into the sub-wavelength dimensions. Also, they have been recently utilized to enhance the functionality of nonlinear optical devices. By inserting a dielectric nanoparticle within the gap of a dipole nanoantenna, the third-harmonic generation (THG) emission can be boosted. In this study, we simulate dipole and bowtie nanoantennas and compare their THG output spectra with and without the presence of indium tin oxide (ITO) nanocrystal in the nanoantennas gap. The results show that with proper design of the nanoantenna and changing the geometry from the dipole to the bowtie shape as well as inserting the ITO nanocrystal, the THG efficiency can be enhanced by a factor of three, which is higher than the dipole counterpart reported in recent established works. Our work opens a new window to generate more efficient nonlinear phenomena at nanoscale devices.

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Third harmonic generation in ultrathin epsilon-near-zero media

CLEO: 2015 ◽

10.1364/cleo_si.2015.sth3h.7 ◽

2015 ◽

Author(s):

Ting S. Luk ◽

Domenico de Ceglia ◽

Gordon A. Keeler ◽

Rohit P. Prasankumar ◽

Maria A. Vincenti ◽

...

Keyword(s):

Harmonic Generation ◽

Third Harmonic Generation ◽

Third Harmonic ◽

Epsilon Near Zero

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Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films

Applied Physics Letters ◽

10.1063/1.4917457 ◽

2015 ◽

Vol 106 (15) ◽

pp. 151103 ◽

Cited By ~ 78

Author(s):

Ting S. Luk ◽

Domenico de Ceglia ◽

Sheng Liu ◽

Gordon A. Keeler ◽

Rohit P. Prasankumar ◽

...

Keyword(s):

Harmonic Generation ◽

Ultrathin Films ◽

Third Harmonic Generation ◽

Third Harmonic ◽

Zero Modes ◽

Epsilon Near Zero

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Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

Materials ◽

10.3390/ma14123194 ◽

2021 ◽

Vol 14 (12) ◽

pp. 3194

Author(s):

Adrian Petris ◽

Petronela Gheorghe ◽

Tudor Braniste ◽

Ion Tiginyanu

Keyword(s):

Harmonic Generation ◽

Nonlinear Optical ◽

Laser Pulses ◽

Third Harmonic Generation ◽

High Repetition Rate ◽

Third Order ◽

Third Harmonic ◽

The Third ◽

High Repetition ◽

Gan Crystal

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.

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