Extraordinary approach to further boost plasmonic NIR-SERS by cryogenic temperature-suppressed non-radiative recombination

2021 ◽  
Author(s):  
Hui Ma ◽  
Yue Tian ◽  
ANXIN JIAO ◽  
chang wang ◽  
Mengya Zhang ◽  
...  
1988 ◽  
Vol 102 ◽  
pp. 47-50
Author(s):  
K. Masai ◽  
S. Hayakawa ◽  
F. Nagase

AbstractEmission mechanisms of the iron Kα-lines in X-ray binaries are discussed in relation with the characteristic temperature Txof continuum radiation thereof. The 6.7 keV line is ascribed to radiative recombination followed by cascades in a corona of ∼ 100 eV formed above the accretion disk. This mechanism is attained for Tx≲ 10 keV as observed for low mass X-ray binaries. The 6.4 keV line observed for binary X-ray pulsars with Tx> 10 keV is likely due to fluorescence outside the He II ionization front.


Author(s):  
Shiro Fujishiro

The Ti-6 wt.% Al-4 wt.% V commercial alloys have exhibited an improved formability at cryogenic temperature when the alloys were heat-treated prior to the tests. The author was interested in further investigating this unusual ductile behavior which may be associated with the strain-induced transformation or twinning of the a phase, enhanced at lower temperatures. The starting materials, supplied by RMI Co., Niles, Ohio were rolled mill products in the form of 40 mil sheets. The microstructure of the as-received materials contained mainly ellipsoidal α grains measuring between 1 and 5μ. The β phase formed an undefined grain boundary around the a grains. The specimens were homogenized at 1050°C for one hour, followed by aging at 500°C for two hours, and then quenched in water to produce the α/β mixed microstructure.


1959 ◽  
Vol 68 (6) ◽  
pp. 247-260 ◽  
Author(s):  
V.S. Vavilov

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.


2019 ◽  
Author(s):  
Pierfrancesco Aversa ◽  
Senol Öz ◽  
Eunhwan Jung ◽  
Olivier Plantevin ◽  
Olivier Cavani ◽  
...  

Shinku ◽  
1987 ◽  
Vol 30 (5) ◽  
pp. 374-377
Author(s):  
Tsutom YOTSUYA ◽  
Ziro ISHIBE ◽  
Masaaki YOSHITAKE ◽  
Yoshihiko SUZUKI ◽  
Junya YAMAMOTO

Author(s):  
Masafumi YAMAGUCHI ◽  
HITOSHI TAMPO ◽  
Hajime SHIBATA ◽  
Kan-hua Lee ◽  
Kenji ARAKI ◽  
...  

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