scholarly journals Investigation on radiation resistance of Er/Ce co-doped silicate glasses under 5 kGy gamma-ray irradiation

2012 ◽  
Vol 2 (10) ◽  
pp. 1329 ◽  
Author(s):  
Rui-xian Xing ◽  
Yu-bang Sheng ◽  
Zi-jun Liu ◽  
Hai-qing Li ◽  
Zuo-wen Jiang ◽  
...  
2008 ◽  
Vol 600-603 ◽  
pp. 707-710
Author(s):  
Shigeomi Hishiki ◽  
Naoya Iwamoto ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Kazu Kojima ◽  
...  

The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post implantation annealing for source and drain was carried out with carbon coating on the sample surface are compared to MOSFETs that post implantation annealing was carried out without carbon coating. The radiation resistance (gamma-rays) of the carbon-coated MOSFETs is higher than that of non-coated ones. The channel mobility for MOSFETs whose gate oxide was formed using pyrogenic or dry oxidation process dose not change by gamma-ray irradiation below 1x105 Gy. The value of channel mobility slightly increases with increasing dose above 1x105 Gy. No significant increase in irradiation induced interface traps is observed.


2014 ◽  
Vol 32 (22) ◽  
pp. 4393-4399 ◽  
Author(s):  
Youngwoong Kim ◽  
Seongmin Ju ◽  
Seongmook Jeong ◽  
Jong-Yeol Kim ◽  
Nam-Ho Lee ◽  
...  

2021 ◽  
pp. 100113
Author(s):  
Yan Jiao ◽  
Chongyun Shao ◽  
Mengting Guo ◽  
Malgorzata Guzik ◽  
Yang Zhang ◽  
...  

1996 ◽  
Vol 11 (3) ◽  
pp. 461-469 ◽  
Author(s):  
C YONEZAWA ◽  
T TANAKA ◽  
H KAMIOKA

1989 ◽  
Vol 12 (2) ◽  
pp. 115-134 ◽  
Author(s):  
DONALD W. THAYER ◽  
JAMES J. SHIEH ◽  
RONALD K. JENKINS ◽  
JOHN G. PHILLIPS ◽  
EUGEN WIERBICKI ◽  
...  

2005 ◽  
Vol 293 (1) ◽  
pp. 106-110 ◽  
Author(s):  
Takuya Kinoshita ◽  
Satoshi Seino ◽  
Yoshiteru Mizukoshi ◽  
Yohei Otome ◽  
Takashi Nakagawa ◽  
...  

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