Implementing a Raman silicon nanocavity laser for integrated optical circuits by using a (100) SOI wafer with a 45-degree-rotated top silicon layer
1976 ◽
Vol 17
(1)
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pp. 119-123
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Keyword(s):
1974 ◽
2007 ◽
Vol 253
(19)
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pp. 8032-8036
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Keyword(s):
1988 ◽
Vol 35
(6)
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pp. 1029-1048
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