scholarly journals High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

2020 ◽  
Vol 8 (10) ◽  
pp. 1634 ◽  
Author(s):  
Jinfeng Mu ◽  
Meindert Dijkstra ◽  
Jeroen Korterik ◽  
Herman Offerhaus ◽  
Sonia M. García-Blanco
Keyword(s):  
Double Layer ◽  
High Gain ◽  
Monolithic Integration ◽  
Waveguide Amplifiers

Monolithic Integration of Al2O3 and Si3N4 Toward Double-Layer Active–Passive Platform

2019 ◽  
Vol 25 (5) ◽  
pp. 1-11 ◽  
Author(s):  
Jinfeng Mu ◽  
Meindert Dijkstra ◽  
Yean-Sheng Yong ◽  
Michiel de Goede ◽  
Lantian Chang ◽  
...  
Keyword(s):  
Double Layer ◽  
Monolithic Integration

Evaluation of Optical Path Designing on 4x4 Cm2 Er3+/Yb3+ Doped Phosphate Glass Waveguide Substrate

2011 ◽  
Vol 295-297 ◽  
pp. 1240-1243
Author(s):  
Miao Tian ◽  
Xin Zhao ◽  
Zheng Yang Zhou ◽  
Hai Lin
Keyword(s):  
Phosphate Glass ◽  
High Gain ◽  
High Signal ◽  
Gain Enhancement ◽  
Waveguide Amplifiers ◽  
Glass Waveguides ◽  
Integrated Devices ◽  
Bend Waveguide ◽  
Glass Waveguide ◽  
Channel Structures

To achieve high-gain C-band waveguide amplifiers with integrated configuration, bent channel structures (S-, U-, and F-bend) based on buried Er3+/Yb3+ codoped phosphate glass waveguide channel fabricated by field-assisted annealing (FAA) have been designed in a 4´4 cm2 substrate. Using simulated-bend method, the optimal radius for the curved structure is derived to be 1.00 cm with loss coefficient of 0.0045 dB/cm. In the wavelength range of 1520-1575 nm, obvious gain enhancement for the bent structure waveguides is anticipated, and for the F-bend waveguide, the net gain at 1534 nm wavelength is derived to be 43.95 dB, which is much higher than the value of 26.67 and 13.20 dB in the U- and S-bend waveguides, respectively, and over three times higher than that of the straight one. The simulation results indicate that the bent structure designing is beneficial in obtaining high signal gain in buried Er3+/Yb3+ codoped phosphate glass waveguides, which lays the foundation for the further design and fabrication of integrated devices.

Double-layer high-gain microstrip array antenna

2000 ◽  
Vol 48 (7) ◽  
pp. 1033-1035 ◽  
Author(s):  
T.-H. Hsieh ◽  
C.S. Lee
Keyword(s):  
Double Layer ◽  
High Gain ◽  
Array Antenna ◽  
Microstrip Array ◽  
Microstrip Array Antenna

scholarly journals High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm

2010 ◽  
Vol 101 (1-2) ◽  
pp. 119-127 ◽  
Author(s):  
J. Yang ◽  
K. van Dalfsen ◽  
K. Wörhoff ◽  
F. Ay ◽  
M. Pollnau
Keyword(s):  
High Gain ◽  
Channel Waveguide ◽  
Waveguide Amplifiers

A Double-Layer, High-Gain and Dual-Polarized Huygens’ Metalens with Complete Phase Coverage

2021 ◽  
Author(s):  
Zhiyan Bin ◽  
Yong Peng ◽  
Yiyan Liang ◽  
Chunhua Xue ◽  
Qun Lou
Keyword(s):  
Double Layer ◽  
High Gain ◽  
Dual Polarized

An Equivalent Double Layer Model for a Fast Design and Analysis of High Gain-Multilayer Radial Line Slot Antennas

2013 ◽  
Vol E96.B (11) ◽  
pp. 2891-2900 ◽  
Author(s):  
Tung NGUYEN ◽  
Rushanthi JAYAWARDENE ◽  
Yasutomo TAKANO ◽  
Kimio SAKURAI ◽  
Jiro HIROKAWA ◽  
...  
Keyword(s):  
Double Layer ◽  
High Gain ◽  
Layer Model ◽  
Radial Line ◽  
Slot Antennas ◽  
Double Layer Model

Design of a high‐gain wideband antenna using double‐layer metasurface

2018 ◽  
Vol 61 (4) ◽  
pp. 1004-1010 ◽  
Author(s):  
Loghman Asadpor ◽  
Ghader Sharifi ◽  
Mirhamed Rezvani
Keyword(s):  
Double Layer ◽  
High Gain ◽  
Wideband Antenna
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