scholarly journals Self-organization and Self-repair of a Two-dimensional Nanoarray of Ge Quantum Dots Epitaxially Grown on Si Substrates using Ultrathin SiO2 Films

Hyomen Kagaku ◽  
2010 ◽  
Vol 31 (12) ◽  
pp. 626-631
Author(s):  
Yoshiaki NAKAMURA ◽  
Akiyuki MURAYAMA ◽  
Ryoko WATANABE ◽  
Tomokazu IYODA ◽  
Masakazu ICHIKAWA
Keyword(s):  
Quantum Dots ◽  
Self Organization ◽  
Two Dimensional ◽  
Sio2 Films ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Repair

Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates

2010 ◽  
Vol 21 (10) ◽  
pp. 109803-109803
Author(s):  
Yoshiaki Nakamura ◽  
Akiyuki Murayama ◽  
Ryoko Watanabe ◽  
Tomokazu Iyoda ◽  
Masakazu Ichikawa
Keyword(s):  
Quantum Dots ◽  
Two Dimensional ◽  
Si Substrates ◽  
Self Organized ◽  
Ge Quantum Dots ◽  
Self Repair

Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates

2010 ◽  
Vol 21 (9) ◽  
pp. 095305 ◽  
Author(s):  
Yoshiaki Nakamura ◽  
Akiyuki Murayama ◽  
Ryoko Watanabe ◽  
Tomokazu Iyoda ◽  
Masakazu Ichikawa
Keyword(s):  
Quantum Dots ◽  
Two Dimensional ◽  
Si Substrates ◽  
Self Organized ◽  
Ge Quantum Dots ◽  
Self Repair

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

scholarly journals Ion Synthesis: Si-Ge Quantum Dots

2018 ◽  
Vol 52 (5) ◽  
pp. 516
Author(s):  
N.N. Gerasimenko ◽  
N.S. Balakleyskiy ◽  
A.D. Volokhovskiy ◽  
D.I. Smirnov ◽  
O.A. Zaporozhan
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Temperature Region ◽  
Ion Beam ◽  
Self Organization ◽  
High Temperature Annealing ◽  
Ion Energies ◽  
Ion Beam Implantation ◽  
Ge Quantum Dots

AbstractWe present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10^14 to 10^17 cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates

2007 ◽  
Vol 301-302 ◽  
pp. 766-770
Author(s):  
Masaaki Ogawa ◽  
Dong-ho Cha ◽  
Joo-young Lee ◽  
Kang L. Wang
Keyword(s):  
Quantum Dots ◽  
Si Substrates ◽  
Ge Quantum Dots

An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light–matter interaction associated with dual coupling

Nanoscale ◽  
2019 ◽  
Vol 11 (33) ◽  
pp. 15487-15496 ◽  
Author(s):  
Ningning Zhang ◽  
Shuguang Wang ◽  
Peizong Chen ◽  
Lijian Zhang ◽  
Kun Peng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Si Substrates ◽  
Matter Interaction ◽  
Light Matter Interaction ◽  
Ge Quantum Dots

An array of SiGe nanodisks with Ge quantum dots is realized directly on bulk Si substrates, demonstrating a unique light–matter interaction.

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