Ion Synthesis: Si-Ge Quantum Dots

AbstractWe present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10^14 to 10^17 cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

Download Full-text

Spatially arranged chains of Ge quantum dots grown on Si substrate prepatterned by ion-beam-assisted nanoimprint lithography

physica status solidi (c) ◽

10.1002/pssc.201600021 ◽

2016 ◽

Vol 13 (10-12) ◽

pp. 882-885 ◽

Cited By ~ 1

Author(s):

Anatoly Dvurechenskii ◽

Zhanna Smagina ◽

Pavel Novikov ◽

Vladimir Zinovyev ◽

Polina Kuchinskaya ◽

...

Keyword(s):

Quantum Dots ◽

Nanoimprint Lithography ◽

Ion Beam ◽

Si Substrate ◽

Ge Quantum Dots

Download Full-text

Self-organization and Self-repair of a Two-dimensional Nanoarray of Ge Quantum Dots Epitaxially Grown on Si Substrates using Ultrathin SiO2 Films

Hyomen Kagaku ◽

10.1380/jsssj.31.626 ◽

2010 ◽

Vol 31 (12) ◽

pp. 626-631

Author(s):

Yoshiaki NAKAMURA ◽

Akiyuki MURAYAMA ◽

Ryoko WATANABE ◽

Tomokazu IYODA ◽

Masakazu ICHIKAWA

Keyword(s):

Quantum Dots ◽

Self Organization ◽

Two Dimensional ◽

Sio2 Films ◽

Si Substrates ◽

Ge Quantum Dots ◽

Self Repair

Download Full-text

Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition

Acta Physica Sinica ◽

10.7498/aps.61.016804 ◽

2012 ◽

Vol 61 (1) ◽

pp. 016804

Author(s):

Yang Jie ◽

Wang Chong ◽

Jin Ying-Xia ◽

Li Liang ◽

Tao Dong-ping ◽

...

Keyword(s):

Quantum Dots ◽

Ion Beam ◽

The Self ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering ◽

Ge Quantum Dots ◽

Self Assembled

Download Full-text

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating

Applied Physics Letters ◽

10.1063/1.2957676 ◽

2008 ◽

Vol 93 (2) ◽

pp. 023106 ◽

Cited By ~ 22

Author(s):

M. Gherasimova ◽

R. Hull ◽

M. C. Reuter ◽

F. M. Ross

Keyword(s):

Quantum Dots ◽

Focused Ion Beam ◽

Ion Beam ◽

Ge Quantum Dots

Download Full-text

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

Applied Physics Letters ◽

10.1063/1.116843 ◽

1996 ◽

Vol 69 (20) ◽

pp. 3072-3074 ◽

Cited By ~ 125

Author(s):

A. O. Kosogov ◽

P. Werner ◽

U. Gösele ◽

N. N. Ledentsov ◽

D. Bimberg ◽

...

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

High Temperature ◽

High Temperature Annealing ◽

Structural And Optical Properties

Download Full-text

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Advanced Energy Materials ◽

10.1002/aenm.202103191 ◽

2021 ◽

pp. 2103191

Author(s):

Ying Peng ◽

Lei Miao ◽

Chengyan Liu ◽

Haili Song ◽

Masashi Kurosawa ◽

...

Keyword(s):

Quantum Dots ◽

Low Temperature ◽

Temperature Region ◽

Hybrid Film ◽

Thermoelectric Performance ◽

Ge Quantum Dots

Download Full-text

Electrical transport in high-temperature region of nanowiring grown by focused-ion-beam chemical vapor deposition

Digest of Papers Microprocesses and Nanotechnology 2005 ◽

10.1109/imnc.2005.203787 ◽

2005 ◽

Author(s):

K. Nakamatsu ◽

K. Karida ◽

Y. Haruyama ◽

T. Kaito ◽

T. Ichihashi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

High Temperature ◽

Temperature Region ◽

Vapor Deposition ◽

Electrical Transport ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

High Temperature Region

Download Full-text

One-Dimensional Ordering of Self-assembled Ge Dots on Photolithographically Patterned Structures on Si (001)

MRS Proceedings ◽

10.1557/proc-715-a8.5 ◽

2002 ◽

Vol 715 ◽

Author(s):

B. Yang ◽

A.R. Woll ◽

P. Rugheimer ◽

M.G. Lagally

Keyword(s):

Quantum Dots ◽

High Temperature ◽

Plasma Etching ◽

Spatial Arrangement ◽

High Temperature Annealing ◽

Strain Relief ◽

One Dimensional ◽

Patterned Structures ◽

Enhanced Strain ◽

Self Assembled

AbstractWe report spatial arrangement of self-assembled Ge quantum dots on patterned structures on Si (001) without using complicated lithography. Starting from stripes and mesas fabricated by conventional lithography and plasma etching, we prepare sinusoidal Si stripes with narrow ridges and mesas with humped edges via high-temperature annealing. Deposited Ge self-assembles into coherent nanocrystals that align along the narrow ridges of the stripes and the sloped mesa edges. Enhanced strain relief at the ridges due to elastic relaxation and the high step densities on the shallow slopes at the edges are likely causes of nanocrystal alignment.

Download Full-text