scholarly journals Analysis of Intensity Distribution in the He-Ne Laser Beam by Gaussian Distribution Function

2018 ◽  
Vol 7 (4.36) ◽  
pp. 334
Author(s):  
Ahmed N. Abd ◽  
Bahaa Jawad Alwan ◽  
Wasna’a M Abdulridha
Keyword(s):  
Distribution Function ◽  
Laser Beam ◽  
Density Distribution ◽  
Gaussian Distribution ◽  
Intensity Distribution ◽  
Point Of View ◽  
Theoretical Point ◽  
Beam Spot ◽  
Compatibility Analysis ◽  
Gaussian Distribution Function

The purpose of this research is to analyze the distribution of density in the laser beam, both from the experimental and theoretical point of view. I measured the density distribution through the He-Ne laser beam and prepared an attempt to compare it with the Gaussian distribution function. Image profiling can be used to determine the distance of objects depending on the distribution of the laser beam spot surroundings by their width. It can also be used to take pictures of things and define their distances and shape things. As we see, Nubia is very good. From the compatibility analysis found that (the program that made the fitting mention of GNUPLOT). 

Use of the Gaussian Distribution Function as a Tool to Estimate Continuous Heterogeneity in Adsorbing Systems

2001 ◽  
Vol 240 (2) ◽  
pp. 400-411 ◽  
Author(s):  
Jean-Luc Bersillon ◽  
Frederic Villieras ◽  
Frederique Bardot ◽  
Tatiana Gorner ◽  
Jean-Maurice Cases
Keyword(s):  
Distribution Function ◽  
Gaussian Distribution ◽  
Gaussian Distribution Function

Projected Range Dependent Tunneling Current of Asymmetric Double Gate MOSFET

2016 ◽  
Vol 6 (1) ◽  
pp. 113
Author(s):  
Hak Kee Jung
Keyword(s):  
Distribution Function ◽  
Gaussian Distribution ◽  
Potential Distribution ◽  
Gaussian Function ◽  
Tunneling Current ◽  
Channel Length ◽  
Double Gate ◽  
Accurate Analysis ◽  
Projected Range ◽  
Gaussian Distribution Function

This study is to analyze the changes of tunneling current according to projected range, a variable of Gaussian function of channel doping function of Asymmetric Double Gate; ADG MOSFET. In MOSFET with channel length below 10 nm, tunneling current occupies a large percentage among off-currents. The increase of tunneling current has a large effect on the characteristics of subthreshold such as threshold voltage movement and the decline of subthreshold swing value, so the accurate analysis of this is being required. To analyze this, potential distribution of series form was obtained using Gaussian distribution function, and using this hermeneutic potential distribution, thermionic emission current and tunneling current making up off-current were obtained. At this point, the effect that the changes of projected range, a variable of Gaussian distribution function, have on the ratio of tunneling current among off-currents was analyzed. As a result, the smaller projected range was, the lower the ratio of tunneling current was. When projected range increased, tunneling current increased largely. Also, it was observed that the value of projected range which the ratio of tunneling current increased changed according to maximum channel doping value, channel length, and channel width.

scholarly journals Generalized Pareto distribution function for Au colloidal systems

2018 ◽  
Author(s):  
Dayane Vieira Nascimento dos Santos ◽  
Diego Pereira dos Santos
Keyword(s):  
Distribution Function ◽  
Pareto Distribution ◽  
Incident Light ◽  
Generalized Pareto Distribution ◽  
Point Of View ◽  
Raman Signal ◽  
Theoretical Point ◽  
Colloidal Systems ◽  
Metallic Nanoparticle ◽  
Surface Enhanced Raman

The Raman signal can be enhanced by the SERS (Surface-Enhanced Raman Scattering) technique that uses metallic nanoparticle (NP) colloids to intensify the electric field of incident light. In this work we explore from a theoretical point of view, through simulation, the behavior of the distribution of the intensification factor (F) on the surface of Au spherical NPs formed by different aggregates (dimers and trimeros) and mixtures thereof, which can be described by the Pareto distribution function.

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