Tuning Hybrid Nano-semiconductor-glass Via High Intensity Laser

Conceptually, the high intensity laser represents the simplest thin film deposition techniques that consists of both a target and a substrate holders housed in a vacuum chamber with a high powered pulsed laser as the external energy source for evaporation of target material (Semiconductor Glass). Using deposit thin laser films three ranges of frequencies were produced: (0-15,000 mJ/cm2) as a result tuning of semiconductor was satisfying condition, while the second, 0-33,000 mJ/cm2 as a result tuning of semiconductor had a stable condition and the last 0-100,000 mJ/cm2 as a result tuning of semiconductor was unstable condition. The results demonstrate a decrease in resistance due to charging the semiconductor glass by high intensity laser as well as a superior charge efficiency and lifetime of semiconductor glass coated cells compared to high intensity laser. The current increase in the charge appeared proportional with extra energy stored of the semiconductor glass coated electrodes at 2Co (>23%) in comparison with control. It is concluded that an increase in the capacity of semiconductor glass may address the main difficulty for utilizing the high intensity laser chemistry for future demands.