Analysis and design of half-bridge gate driver for enhancement-mode gallium nitride-on-silicon HEMTs

2016 ◽  
Author(s):  
Ziang Chen
Keyword(s):  
Gallium Nitride ◽  
Analysis And Design ◽  
Enhancement Mode ◽  
Gate Driver

scholarly journals Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

2021 ◽  
Vol 12 (3) ◽  
pp. 1293
Author(s):  
Martin J. Carra ◽  
Hernan Tacc ◽  
Jose Lipovetzky
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Gallium Nitride ◽  
Switching Process ◽  
Control Power ◽  
Power Switch ◽  
Power Switches ◽  
Gate Driver ◽  
Output Losses

<p>Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.</p>

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

2019 ◽  
Vol 12 (15) ◽  
pp. 3928-3935 ◽  
Author(s):  
Wei Jia Zhang ◽  
Yahui Leng ◽  
Jingshu Yu ◽  
Xiaoxue Jiang ◽  
ChuYao Cheng ◽  
...  
Keyword(s):  
Power Transistors ◽  
Enhancement Mode ◽  
Detection Circuit ◽  
Gate Driver
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