Enhancement mode gallium nitride transistor reliability

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112686 ◽

2015 ◽

Author(s):

Alex Lidow ◽

Rob Strittmatter ◽

Chunhua Zhou ◽

Yanping Ma

Keyword(s):

Gallium Nitride ◽

Enhancement Mode ◽

Transistor Reliability

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Enhancement mode gallium nitride transistor reliability

2015 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec.2015.7104532 ◽

2015 ◽

Author(s):

Rob Strittmatter ◽

Chunhua Zhou ◽

Alex Lidow ◽

Yanping Ma

Keyword(s):

Gallium Nitride ◽

Enhancement Mode ◽

Transistor Reliability

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Enhancement mode gallium nitride transistor reliability

2015 IEEE First International Conference on DC Microgrids (ICDCM) ◽

10.1109/icdcm.2015.7152052 ◽

2015 ◽

Author(s):

Alex Lidow ◽

Rob Strittmatter

Keyword(s):

Gallium Nitride ◽

Enhancement Mode ◽

Transistor Reliability

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A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors

SAE International Journal of Electrified Vehicles ◽

10.4271/14-11-01-0010 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

James Tian ◽

Chunyan Lai ◽

Yang Luo ◽

Steven Turco ◽

Sivanagaraju Gangavarapu ◽

...

Keyword(s):

Gallium Nitride ◽

Enhancement Mode ◽

Modeling Approach ◽

Parasitic Parameters ◽

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Evaluation of gate drive overvoltage management methods for enhancement mode gallium nitride transistors

2017 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec.2017.7931044 ◽

2017 ◽

Author(s):

David Reusch ◽

Michael de Rooij

Keyword(s):

Gallium Nitride ◽

Enhancement Mode

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Degradation Characteristics of Enhancement-Mode Gallium Nitride Cascoded FETs under different DC voltages

2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE) ◽

10.1109/eitce47263.2019.9094792 ◽

2019 ◽

Author(s):

Dongqing Hu ◽

Xiaokang Luo ◽

Xintian Zhou

Keyword(s):

Gallium Nitride ◽

Enhancement Mode

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Innovative application and driving of enhancement mode gallium nitride power transistors

10.32657/10356/73923 ◽

2018 ◽

Author(s):

◽

Aaron Qingwei Cai

Keyword(s):

Gallium Nitride ◽

Power Transistors ◽

Enhancement Mode

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Loss modeling for enhancement mode gallium nitride field efect transistor in power converter applications

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society ◽

10.1109/iecon.2013.6700326 ◽

2013 ◽

Author(s):

Omair Khan ◽

Fonkwe Fongang Edwin ◽

Weidong Xiao

Keyword(s):

Gallium Nitride ◽

Power Converter ◽

Enhancement Mode ◽

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Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs

2014 IEEE Radiation Effects Data Workshop (REDW) ◽

10.1109/redw.2014.7004594 ◽

2014 ◽

Author(s):

A. Lidow ◽

A. Nakata ◽

M. Rearwin ◽

J. Strydom ◽

A. M. Zafrani

Keyword(s):

Gallium Nitride ◽

Radiation Effect ◽

Single Event ◽

Enhancement Mode

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Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda.2016.7799923 ◽

2016 ◽

Author(s):

Juan Colmenares ◽

Thomas Foulkes ◽

Christopher Barth ◽

Tomas Modeert ◽

Robert C. N. Pilawa-Podgurski

Keyword(s):

Gallium Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Cryogenic Temperatures ◽

Experimental Characterization ◽

Enhancement Mode

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Analysis and design of half-bridge gate driver for enhancement-mode gallium nitride-on-silicon HEMTs

10.14711/thesis-b1584790 ◽

2016 ◽

Author(s):

Ziang Chen

Keyword(s):

Gallium Nitride ◽

Analysis And Design ◽

Enhancement Mode ◽

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