scholarly journals Dielectric relaxation and study of electrical conduction mechanism in BaZr0.1Ti0.9O3 ceramics by correlated barrier hopping model

2018 ◽  
Vol 36 (1) ◽  
pp. 112-122 ◽  
Author(s):  
Tanusree Mondal ◽  
Sayantani Das ◽  
T.P. Sinha ◽  
P.M. Sarun

AbstractThis work aims to study the electrical conduction mechanism in the dielectric material BaZr0.1Ti0.9O3(BZT) ceramics by applying AC signal in the frequency range of 102Hz to 106Hz. The phase purity and microstructure of the sample have been studied by X-ray diffraction refinement and field-emission scanning electron microscope (FE-SEM) analysis. The appearance of resonance peaks in the loss tangent at high temperature is due to inherent dielectric relaxation processes of this oxide. The temperature dependent Cole-Cole plot has been studied in details to determine both the grain and grain boundary contribution to the conductivity. Electrical modulus analysis reveals that the hopping of charge carriers is the most probable conduction mechanism in BZT ceramics. The obtained data of AC conductivity obey the universal double power law and have been discussed in terms of microstructural network characteristics. The behavior of frequency exponent n of AC conductivity as a function of temperature verify the applicability of the correlated barrier hopping (CBH) model. The AC conductivity data are used to estimate the minimum hopping length, density of states at Fermi level, thermal conductivity and apparent activation energy. The value of activation energy confirms that the oxygen vacancies play a vital role in the conduction mechanism.

1972 ◽  
Vol 50 (17) ◽  
pp. 2877-2881
Author(s):  
R. C. Kerby ◽  
J. R. Wilson

The liquid ferric vanadates exhibited n-type semiconduction properties at oxygen partial pressures greater than 0.1 atm. For ferric oxide concentrations less than 16 mol%, the activation energy of conduction was less than the activation energy associated with liquid vanadium pentoxide, but at greater ferric oxide concentrations, the activation energy increased to values greater than that associated with liquid vanadium pentoxide. The negative oxygen partial pressure coefficients of conduction were found to decrease with increasing ferric oxide concentration. The addition of sodium oxide to the liquid ferric vanadates decreased the activation energies of conduction. The electrical conductivities of these sodium ferric vanadates were found to be independent of oxygen partial pressure.The electrical conduction mechanism of the ferric vanadates was considered to involve the movement of delocalized electrons or polarons between V4+ and V5+ centers at low ferric oxide concentrations and the additional movement of delocalized electrons between Fe2+ and Fe3+ centers for ferric oxide concentrations greater than 16 mol%. The addition of sodium oxide to the liquid ferric vanadates apparently changed the electrical conduction mechanism from semiconduction to ionic conduction. Sodium and oxygen ions are probably the charge-carrying species in these ionic melts.


1994 ◽  
Vol 08 (25) ◽  
pp. 1591-1595
Author(s):  
M.H. CHOHAN ◽  
H. MAHMOOD ◽  
FARHANA SHAH

A study of the electrical conduction mechanism in polyimide (Kapton) films has been made. The measurements were carried out on films of 12.5 and 25 µm thick in the voltage range of 100 to 3000 V and in the temperature range of 300 to 373 K. The conduction mechanism in the low field region is a hopping type process while the high field phenomenon is a Poole-Frenkel behavior. The activation energy is about 1.1 eV at 100 V and 0.8 eV at 3000 V.


2002 ◽  
Vol 41 (Part 1, No. 11B) ◽  
pp. 7053-7056 ◽  
Author(s):  
Masatake Takahashi ◽  
Yuji Noguchi ◽  
Masaru Miyayama

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