scholarly journals Nonlinear plasmonic response in atomically thin metal films

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Álvaro Rodríguez Echarri ◽  
Joel D. Cox ◽  
Fadil Iyikanat ◽  
F. Javier García de Abajo

Abstract Nanoscale nonlinear optics is limited by the inherently weak nonlinear response of conventional materials and the small light–matter interaction volumes available in nanostructures. Plasmonic excitations can alleviate these limitations through subwavelength light focusing, boosting optical near fields that drive the nonlinear response, but also suffering from large inelastic losses that are further aggravated by fabrication imperfections. Here, we theoretically explore the enhanced nonlinear response arising from extremely confined plasmon polaritons in few-atom-thick crystalline noble metal films. Our results are based on quantum-mechanical simulations of the nonlinear optical response in atomically thin metal films that incorporate crucial electronic band structure features associated with vertical quantum confinement, electron spill-out, and surface states. We predict an overall enhancement in plasmon-mediated nonlinear optical phenomena with decreasing film thickness, underscoring the importance of surface and electronic structure in the response of ultrathin metal films.

Plasmonics ◽  
2011 ◽  
Vol 7 (1) ◽  
pp. 47-52 ◽  
Author(s):  
Qiaoqiang Gan ◽  
Wenli Bai ◽  
Suhua Jiang ◽  
Yongkang Gao ◽  
Wendi Li ◽  
...  

2005 ◽  
Author(s):  
Armando Giannattasio ◽  
Stephen Wedge ◽  
Lucy H. Smith ◽  
William L. Barnes

Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  

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